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Paper Abstract and Keywords
Presentation 2010-06-18 10:00
Theoretical Analysis of Carrier Transport in Nano-Scale InGaAs-Channel MOSFETs
Takahiro Homma, Hisanao Watanabe, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Science.) ED2010-42
Abstract (in Japanese) (See Japanese page) 
(in English) Because of higher carrier mobility owing to small effective mass, III-V compound semiconductors have been attracted much attention as possible channel materials to realize next generation devices for the post-Si MOSFET. In this paper, we theoretically investigate the carrier transport phenomena that determine the drive current in the nano-scale InGaAs-channel MOSFETs by using the quantum corrected Monte Carlo method.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaAs / MOSFET / Backscattering / Quantum-corrected Monte Carlo simulation / Quasi-ballistic transport / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 80, ED2010-42, pp. 47-52, June 2010.
Paper # ED2010-42 
Date of Issue 2010-06-10 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-42

Conference Information
Committee ED  
Conference Date 2010-06-17 - 2010-06-18 
Place (in Japanese) (See Japanese page) 
Place (in English) JAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process and device technology of semiconductors (surface, interface, reliability, etc.) 
Paper Information
Registration To ED 
Conference Code 2010-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Theoretical Analysis of Carrier Transport in Nano-Scale InGaAs-Channel MOSFETs 
Sub Title (in English)  
Keyword(1) InGaAs  
Keyword(2) MOSFET  
Keyword(3) Backscattering  
Keyword(4) Quantum-corrected Monte Carlo simulation  
Keyword(5) Quasi-ballistic transport  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Takahiro Homma  
1st Author's Affiliation Tokyo University of Science (Tokyo Univ. of Science.)
2nd Author's Name Hisanao Watanabe  
2nd Author's Affiliation Tokyo University of Science (Tokyo Univ. of Science.)
3rd Author's Name Shinsuke Hara  
3rd Author's Affiliation Tokyo University of Science (Tokyo Univ. of Science.)
4th Author's Name Hiroki I. Fujishiro  
4th Author's Affiliation Tokyo University of Science (Tokyo Univ. of Science.)
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Speaker Author-1 
Date Time 2010-06-18 10:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2010-42 
Volume (vol) vol.110 
Number (no) no.80 
Page pp.47-52 
#Pages 6 
Date of Issue 2010-06-10 (ED) 

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