Paper Abstract and Keywords |
Presentation |
2010-07-29 13:55
Growth of Fe3O4/GaAs Epitaxial Thin Films by Gas Flow Sputtering Hiroshi Sakuma, Yuki Shidara, Yasuhito Kagi, Ryo Suzuki, Kiyoshi Ishii (Utsunomiya Univ.) CPM2010-31 Link to ES Tech. Rep. Archives: CPM2010-31 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The epitaxial growth of oxides on semiconductors is generally associated with difficulty. Magnetite (Fe3O4) is a half metal, and its epitaxial growth on semiconductors (especially on GaAs) is important for spintronics applications. While the Fe3O4/GaAs epitaxial films are conventionally fabricated by the oxidation of Fe/GaAs epitaxial films, we successfully deposited Fe3O4 epitaxial layers directly on GaAs substrates by annealing GaAs substrates in air and using gas flow sputtering. In this paper, we report on the optimization of oxygen flow rate in the deposition of Fe3O4 epitaxial layers. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Gas Flow Sputtering / Epitaxial Growth / Magnetite / GaAs / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 154, CPM2010-31, pp. 1-4, July 2010. |
Paper # |
CPM2010-31 |
Date of Issue |
2010-07-22 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
CPM2010-31 Link to ES Tech. Rep. Archives: CPM2010-31 |
Conference Information |
Committee |
CPM |
Conference Date |
2010-07-29 - 2010-07-30 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Michino-Eki Shari Meeting Room |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
CPM |
Conference Code |
2010-07-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Growth of Fe3O4/GaAs Epitaxial Thin Films by Gas Flow Sputtering |
Sub Title (in English) |
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Keyword(1) |
Gas Flow Sputtering |
Keyword(2) |
Epitaxial Growth |
Keyword(3) |
Magnetite |
Keyword(4) |
GaAs |
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1st Author's Name |
Hiroshi Sakuma |
1st Author's Affiliation |
Utsunomiya University (Utsunomiya Univ.) |
2nd Author's Name |
Yuki Shidara |
2nd Author's Affiliation |
Utsunomiya University (Utsunomiya Univ.) |
3rd Author's Name |
Yasuhito Kagi |
3rd Author's Affiliation |
Utsunomiya University (Utsunomiya Univ.) |
4th Author's Name |
Ryo Suzuki |
4th Author's Affiliation |
Utsunomiya University (Utsunomiya Univ.) |
5th Author's Name |
Kiyoshi Ishii |
5th Author's Affiliation |
Utsunomiya University (Utsunomiya Univ.) |
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Speaker |
Author-1 |
Date Time |
2010-07-29 13:55:00 |
Presentation Time |
25 minutes |
Registration for |
CPM |
Paper # |
CPM2010-31 |
Volume (vol) |
vol.110 |
Number (no) |
no.154 |
Page |
pp.1-4 |
#Pages |
4 |
Date of Issue |
2010-07-22 (CPM) |