Paper Abstract and Keywords |
Presentation |
2010-07-29 14:55
Epitaxial growth of ZnO films using hot water molecules generated by catalytic reaction Masami Tahara, Hitoshi Miura, Tomoyoshi Kuroda, Hiroshi Nishiyama, Kanji Yasui (Nagoka Univ. of Tech.) CPM2010-33 Link to ES Tech. Rep. Archives: CPM2010-33 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have developed a new CVD method for thin film growth of metal oxides using a reaction between organometallic compounds and high-energy H2O produced by a Pt-catalyzed H2O2 reaction. Using this CVD method, epitaxial growth of ZnO films on sapphire substrates was investigated. ZnO epitaxial films were grown directly on a-plane (11-20) sapphire substrates at substrate temperatures of 573-873 K without buffer layer. X-ray diffraction patterns exhibited intense (0002) and (0004) peaks from the ZnO(0001) index plane. The smallest full width at half maximum (FWHM) value of the ω-rocking curve of ZnO(0002) was less than 0.1deg (273 arcsec). The Hall mobility and residual carrier concentration of the epilayers were in the ranges 140-168 cm2V1s1 and 1.6-6×1017 cm3, respectively. Optical transparency of the ZnO samples grown on the sapphire substrates was more than 95% that of the sample without ZnO film. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ZnO / catalytic reaction / high-energy H2O / X-ray diffraction pattern / Hall mobility / optical transparency / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 154, CPM2010-33, pp. 11-15, July 2010. |
Paper # |
CPM2010-33 |
Date of Issue |
2010-07-22 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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CPM2010-33 Link to ES Tech. Rep. Archives: CPM2010-33 |