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| Presentation | 2010-10-28 16:40 Structure and electric properties of RF-sputtered p-type nickel oxide thin films Atsushi Nagata, Kazuo Uchida, Atsushi Koizumi, Hiroshi Ono, Shinji Nozaki (UEC)  CPM2010-96 Link to ES Tech. Rep. Archives: CPM2010-96 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | NiOx as a transparent oxide semiconductor has been known long to show an intrinsic p-type conductivity although most of oxide semiconductors such as ITO and ZnO show n type. It is uncertain that NiOx really shows p-type conductivity due to accuracy for measurements caused by its low mobility. In this work we report the growth and characterization of NiOx films grown by RF-sputtering method. Since we have found that the electric conductivity of NiOx films were controlled by the O2 partial pressure during sputtering, electrical, optical and structural properties of NiOx films were examined in detailed. Especially detailed analysis of electrical conductivity measurement was carried out. As the result, NiOx films show low resistivity with p-type conductivity when O2 partial pressure is low but their transparency became deteriorated. This can be attributed that Ni vacancies are responsible for the p-type conductivity but their optical level in the gap increase light absorption such as color centers. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Nickel oxide semiconductor / Nickel oxide / NiOx / NiO / p-type oxide semiconductor / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 261, CPM2010-96, pp. 27-31, Oct. 2010. | |
| Paper # | CPM2010-96 | |
| Date of Issue | 2010-10-21 (CPM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | CPM2010-96 Link to ES Tech. Rep. Archives: CPM2010-96 |
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| Conference Information | |
| Committee | CPM |
| Conference Date | 2010-10-28 - 2010-10-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2010-10-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Structure and electric properties of RF-sputtered p-type nickel oxide thin films |
| Sub Title (in English) | |
| Keyword(1) | Nickel oxide semiconductor |
| Keyword(2) | Nickel oxide |
| Keyword(3) | NiOx |
| Keyword(4) | NiO |
| Keyword(5) | p-type oxide semiconductor |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Atsushi Nagata |
| 1st Author's Affiliation | The University of Electro-Communications (UEC) |
| 2nd Author's Name | Kazuo Uchida |
| 2nd Author's Affiliation | The University of Electro-Communications (UEC) |
| 3rd Author's Name | Atsushi Koizumi |
| 3rd Author's Affiliation | The University of Electro-Communications (UEC) |
| 4th Author's Name | Hiroshi Ono |
| 4th Author's Affiliation | The University of Electro-Communications (UEC) |
| 5th Author's Name | Shinji Nozaki |
| 5th Author's Affiliation | The University of Electro-Communications (UEC) |
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| Speaker | Author-1 |
| Date Time | 2010-10-28 16:40:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | CPM2010-96 |
| Volume (vol) | vol.110 |
| Number (no) | no.261 |
| Page | pp.27-31 |
| #Pages | 5 |
| Date of Issue | 2010-10-21 (CPM) |
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