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Paper Abstract and Keywords
Presentation 2010-10-29 09:50
Estimation of interface state density at nitride/SiC interface using current-voltage characteristics of MIS Schottky contact
Yusuke Murata, Shinichiro Suzuki, Shohei Kobayashi, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2010-101
Abstract (in Japanese) (See Japanese page) 
(in English) The nitride film was formed by direct nitridation with NH$_3$ on n type 4H-SiC to form an MIS Schottky diode. Ideality factor n was determined from the current-voltage characteristics of the MIS Schottky diode. The interface state density between nitride layer and SiC was calculated from the ideality factor and the film thickness. The results showed that the ideality factor n was useful parameter for evaluation of nitride/SiC interface.
Keyword (in Japanese) (See Japanese page) 
(in English) SiC / MIS / Schottky contact / Interface state density / direct nitridation / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 261, CPM2010-101, pp. 51-54, Oct. 2010.
Paper # CPM2010-101 
Date of Issue 2010-10-21 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2010-10-28 - 2010-10-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2010-10-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Estimation of interface state density at nitride/SiC interface using current-voltage characteristics of MIS Schottky contact 
Sub Title (in English)  
Keyword(1) SiC  
Keyword(2) MIS  
Keyword(3) Schottky contact  
Keyword(4) Interface state density  
Keyword(5) direct nitridation  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yusuke Murata  
1st Author's Affiliation Shinshu University (Shinshu Univ.)
2nd Author's Name Shinichiro Suzuki  
2nd Author's Affiliation Shinshu University (Shinshu Univ.)
3rd Author's Name Shohei Kobayashi  
3rd Author's Affiliation Shinshu University (Shinshu Univ.)
4th Author's Name Tomohiko Yamakami  
4th Author's Affiliation Shinshu University (Shinshu Univ.)
5th Author's Name Rinpei Hayashibe  
5th Author's Affiliation Shinshu University (Shinshu Univ.)
6th Author's Name Kiichi Kamimura  
6th Author's Affiliation Shinshu University (Shinshu Univ.)
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Speaker Author-1 
Date Time 2010-10-29 09:50:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2010-101 
Volume (vol) vol.110 
Number (no) no.261 
Page pp.51-54 
#Pages 4 
Date of Issue 2010-10-21 (CPM) 

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