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| Presentation | 2011-07-29 16:35 Inductively coupled plasma etching of Al-rich AlGaAs for Photonic Crystal Fabrication Yuta Kitabayashi, Masaya Mochizuki, Fumitaro Ishikawa, Masahiko Kondow (Osaka Univ.)  ED2011-44 Link to ES Tech. Rep. Archives: ED2011-44 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We investigate inductively coupled plasma deep dry etching of Al$_{0.8}$Ga$_{0.2}$As for photonic crystal（PC）fabrication using Cl$_2$/BCl$_3$/CH$_4$ chemistry. Characteristic AlO$_x$ deposition is observed at etching, resulting in the reduction of the etching rate. BCl$_3$ is considered to scavenge the deposited AlO$_x$ by its reductive reaction. CH$_4$ make polymer, having a effect of side wall protection. Concerning the impact of pattern size, pronounced inverse RIE lag is observed, which is beneficial for the small size PC fabrication typically having its holes diameter of several hundred nm. From the findings, we successfully fabricate PCs structure with the air holes having its aspect ratio of 8 having its diameter 110 nm. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Inductively coupled plasma etching / Al-rich AlGaAs / Photonic crystal / inverse RIE lag / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 167, ED2011-44, pp. 35-39, July 2011. | |
| Paper # | ED2011-44 | |
| Date of Issue | 2011-07-22 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2011-44 Link to ES Tech. Rep. Archives: ED2011-44 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2011-07-29 - 2011-07-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Multimedia system center, Nagaoka Univ. of Tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | TFT (organic,oxide), Semiconductor process (surface, interface, reliability), etc. |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2011-07-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Inductively coupled plasma etching of Al-rich AlGaAs for Photonic Crystal Fabrication |
| Sub Title (in English) | |
| Keyword(1) | Inductively coupled plasma etching |
| Keyword(2) | Al-rich AlGaAs |
| Keyword(3) | Photonic crystal |
| Keyword(4) | inverse RIE lag |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yuta Kitabayashi |
| 1st Author's Affiliation | Osaka University (Osaka Univ.) |
| 2nd Author's Name | Masaya Mochizuki |
| 2nd Author's Affiliation | Osaka University (Osaka Univ.) |
| 3rd Author's Name | Fumitaro Ishikawa |
| 3rd Author's Affiliation | Osaka University (Osaka Univ.) |
| 4th Author's Name | Masahiko Kondow |
| 4th Author's Affiliation | Osaka University (Osaka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2011-07-29 16:35:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2011-44 |
| Volume (vol) | vol.111 |
| Number (no) | no.167 |
| Page | pp.35-39 |
| #Pages | 5 |
| Date of Issue | 2011-07-22 (ED) |
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