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Paper Abstract and Keywords
Presentation 2011-07-30 14:45
Sub-band structure and spin-orbit interaction analysis in two-dimensional electron gas bi-layer system in high In-content InGaAs/InAlAs hetero-structures
Masashi Akabori, Tomoyuki Katayama, Kosaku Moromoto, Hiuma Iwase, Syoji Yamada (CNMT JAIST) ED2011-57
Abstract (in Japanese) (See Japanese page) 
(in English) In high In-content InGaAs/InAlAs hetero-junctions, two-dimensional electron gas (2DEG) with strong Rashba type (structure induced) spin-orbit (SO) interaction can be formed. We have for the first time grown the wide well samples in which the 2DEGs are formed at both the well interfaces and succeeded to estimate sheet electron density, electron effective mass and SO coupling constant for each 2DEG layer (sub-band) by temperature dependent magneto-resistance analysis. As a result, transport properties as well as SO interaction comparable to those in the single layer 2DEG samples are confirmed. Moreover, some results suggesting the interaction between the upper and lower 2DEGs are obtained.
Keyword (in Japanese) (See Japanese page) 
(in English) high In-content InGaAs/InAlAs hetero-junctions / Rashba type (structure induced) spin-orbit (SO) interaction / temperature dependent magneto-resistance analysis / / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 167, ED2011-57, pp. 103-108, July 2011.
Paper # ED2011-57 
Date of Issue 2011-07-22 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED  
Conference Date 2011-07-29 - 2011-07-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Multimedia system center, Nagaoka Univ. of Tech. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) TFT (organic,oxide), Semiconductor process (surface, interface, reliability), etc. 
Paper Information
Registration To ED 
Conference Code 2011-07-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Sub-band structure and spin-orbit interaction analysis in two-dimensional electron gas bi-layer system in high In-content InGaAs/InAlAs hetero-structures 
Sub Title (in English)  
Keyword(1) high In-content InGaAs/InAlAs hetero-junctions  
Keyword(2) Rashba type (structure induced) spin-orbit (SO) interaction  
Keyword(3) temperature dependent magneto-resistance analysis  
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1st Author's Name Masashi Akabori  
1st Author's Affiliation CNMT JAIST (CNMT JAIST)
2nd Author's Name Tomoyuki Katayama  
2nd Author's Affiliation CNMT JAIST (CNMT JAIST)
3rd Author's Name Kosaku Moromoto  
3rd Author's Affiliation CNMT JAIST (CNMT JAIST)
4th Author's Name Hiuma Iwase  
4th Author's Affiliation CNMT JAIST (CNMT JAIST)
5th Author's Name Syoji Yamada  
5th Author's Affiliation CNMT JAIST (CNMT JAIST)
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Speaker Author-5 
Date Time 2011-07-30 14:45:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-57 
Volume (vol) vol.111 
Number (no) no.167 
Page pp.103-108 
#Pages 6 
Date of Issue 2011-07-22 (ED) 

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