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Paper Abstract and Keywords
Presentation 2011-10-20 13:30
[Invited Talk] Characteristics Variability and Random Telegraph Noise in Fully Depleted SOI MOSFETs
Toshiro Hiramoto (Univ. of Tokyo) SDM2011-97
Abstract (in Japanese) (See Japanese page) 
(in English) Statistical characteristics of intrinsic channel fully depleted (FD) SOI MOSFETs and conventional bulk MOSFETs are compared. It is experimentally confirmed that threshold voltage (Vth) variability is well suppressed in FD SOI MOSFETs. Moreover, the worst value of time-dependent Vth change due to random telegraph noise (RTN) is also smaller in FD SOI MOSFETs. The mechanisms of these variability suppressions are discussed using three dimensional device simulation and it turns out that the absence of random dopant fluctuation (RDF) in channel is responsible for suppressed variability. These results strongly demonstrate the advantage of intrinsic channel MOSFETs where the channel does not include dopant atoms.
Keyword (in Japanese) (See Japanese page) 
(in English) Random dopant fluctuation / RDF / Random telegraph noise / RTN / FD SOI MOSFET / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 249, SDM2011-97, pp. 1-4, Oct. 2011.
Paper # SDM2011-97 
Date of Issue 2011-10-13 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2011-10-20 - 2011-10-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. (Niche) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process science and new process technologies 
Paper Information
Registration To SDM 
Conference Code 2011-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characteristics Variability and Random Telegraph Noise in Fully Depleted SOI MOSFETs 
Sub Title (in English)  
Keyword(1) Random dopant fluctuation  
Keyword(2) RDF  
Keyword(3) Random telegraph noise  
Keyword(4) RTN  
Keyword(5) FD SOI MOSFET  
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1st Author's Name Toshiro Hiramoto  
1st Author's Affiliation University of Tokyo (Univ. of Tokyo)
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Speaker Author-1 
Date Time 2011-10-20 13:30:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2011-97 
Volume (vol) vol.111 
Number (no) no.249 
Page pp.1-4 
#Pages 4 
Date of Issue 2011-10-13 (SDM) 

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