Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2011-10-20 16:10
[Special Talk] Science Based New Silicon Technologies
Tadahiro Ohmi (Tohoku Univ.) SDM2011-102
Abstract (in Japanese) (See Japanese page) 
(in English) Current Silicon Technologies can fabricate LSI only on (100) Silicon surface using two dimensional planar structure MOS transistors, because relatively high integrity SiO2 films can be formed only on (100) Silicon surface by current thermal oxidations using O2 molecules and/or H2O molecules at high temperatures. Thus, very limited capability of the silicon crystal can be practically utilized at present by the current silicon technologies. Current silicon technologies are typical experience/feeling based technologies. In order to utilize the entire capability of the silicon crystal, LSI must be fabricated on any crystal orientation silicon surface by using three dimensional structure MOS transistors. In order to perform this requirement, very high integrity gate insulator films must be formed on any crystal orientation silicon surface with the same formation speed ,i. e., science based radical oxidation and radical nitridation using newly developed plasma process equipment completely free from contaminations and damages.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon Technology / Radical Oxidation / Radical Nitridation / Three-Dimensional Structure MOS Transistor / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 249, SDM2011-102, pp. 27-36, Oct. 2011.
Paper # SDM2011-102 
Date of Issue 2011-10-13 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2011-102

Conference Information
Committee SDM  
Conference Date 2011-10-20 - 2011-10-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. (Niche) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process science and new process technologies 
Paper Information
Registration To SDM 
Conference Code 2011-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Science Based New Silicon Technologies 
Sub Title (in English)  
Keyword(1) Silicon Technology  
Keyword(2) Radical Oxidation  
Keyword(3) Radical Nitridation  
Keyword(4) Three-Dimensional Structure MOS Transistor  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Tadahiro Ohmi  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name  
2nd Author's Affiliation ()
3rd Author's Name  
3rd Author's Affiliation ()
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2011-10-20 16:10:00 
Presentation Time 90 minutes 
Registration for SDM 
Paper # SDM2011-102 
Volume (vol) vol.111 
Number (no) no.249 
Page pp.27-36 
#Pages 10 
Date of Issue 2011-10-13 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan