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Paper Abstract and Keywords
Presentation 2011-10-21 14:00
[Invited Talk] Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching
Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2011-110
Abstract (in Japanese) (See Japanese page) 
(in English) We investigated the effects of plasma process-induced physical damage (bombardment of ions) on MOSFET performance degradation. We focus on “Si recess” in the source / drain extension region – Si loss by a subsequent wet-etch of the damaged-layer formed during plasma etch processes. We present a model describing the relationship between the energy of incident ion, Si recess depth dR, and the threshold voltage shift Vth of MOSFET. Based on the analytic model, we then propose a unified framework for predicting the MOSFET parameter fluctuation induced by the plasma process damage. The model prediction suggests an increase in Vth-variation by Si recess structure (dR). We also estimate an enhancement of the subthreshold leakage-current fluctuation by the Si recess structure.
Keyword (in Japanese) (See Japanese page) 
(in English) Plasma-Induced Damage / Si recess / Threshold Voltage Shift / Subthreshold Leakage / Parameter Fluctuation / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 249, SDM2011-110, pp. 73-78, Oct. 2011.
Paper # SDM2011-110 
Date of Issue 2011-10-13 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2011-10-20 - 2011-10-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. (Niche) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process science and new process technologies 
Paper Information
Registration To SDM 
Conference Code 2011-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching 
Sub Title (in English)  
Keyword(1) Plasma-Induced Damage  
Keyword(2) Si recess  
Keyword(3) Threshold Voltage Shift  
Keyword(4) Subthreshold Leakage  
Keyword(5) Parameter Fluctuation  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Koji Eriguchi  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Yoshinori Nakakubo  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Asahiko Matsuda  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Yoshinori Takao  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
5th Author's Name Kouichi Ono  
5th Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-1 
Date Time 2011-10-21 14:00:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2011-110 
Volume (vol) vol.111 
Number (no) no.249 
Page pp.73-78 
#Pages 6 
Date of Issue 2011-10-13 (SDM) 

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