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Paper Abstract and Keywords
Presentation 2011-10-26 14:55
MOVPE growth of n-InAlN/p-InGaN heterojunction with an intermediate In composition range
Toru Hotta, Kenichi Sugita, A. G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) CPM2011-113
Abstract (in Japanese) (See Japanese page) 
(in English) MOVPE growth of InAlN and InGaN has been studied in order to develop basic technologies for InAlN/InGaN heterostructure devices. By changing growth temperature and TMI/(TMI+TEG) or TMI/(TMI+TMA) molar ratio, single crystalline InGaN and InAlN films with an intermediate composition range have been grown without phase separation and metallic In inclusions. A n-In0.3Al0.7N/p-In0.2Ga0.8N hetero-structure has been successfully prepared and its rectification behavior and photo-response has been confirmed for the first time.
Keyword (in Japanese) (See Japanese page) 
(in English) InAlN / InGaN / heterojunction / MOVPE / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 264, CPM2011-113, pp. 23-26, Oct. 2011.
Paper # CPM2011-113 
Date of Issue 2011-10-19 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF CPM2011-113

Conference Information
Committee CPM  
Conference Date 2011-10-26 - 2011-10-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Fukui Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2011-10-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) MOVPE growth of n-InAlN/p-InGaN heterojunction with an intermediate In composition range 
Sub Title (in English)  
Keyword(1) InAlN  
Keyword(2) InGaN  
Keyword(3) heterojunction  
Keyword(4) MOVPE  
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Keyword(6)  
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Keyword(8)  
1st Author's Name Toru Hotta  
1st Author's Affiliation University of Fukui (Univ. of Fukui)
2nd Author's Name Kenichi Sugita  
2nd Author's Affiliation University of Fukui (Univ. of Fukui)
3rd Author's Name A. G. Bhuiyan  
3rd Author's Affiliation University of Fukui (Univ. of Fukui)
4th Author's Name Akihiro Hashimoto  
4th Author's Affiliation University of Fukui (Univ. of Fukui)
5th Author's Name Akio Yamamoto  
5th Author's Affiliation University of Fukui (Univ. of Fukui)
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Speaker Author-1 
Date Time 2011-10-26 14:55:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2011-113 
Volume (vol) vol.111 
Number (no) no.264 
Page pp.23-26 
#Pages 4 
Date of Issue 2011-10-19 (CPM) 

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