Paper Abstract and Keywords |
Presentation |
2011-10-27 09:55
Preparation of SiC MOS structure using SiO2 Layer deposited by Thermal Decomposition of TEOS Mitsunori Hemmi, Yuya Iguchi, Takashi Sakai, Akihiko Sugita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2011-119 Link to ES Tech. Rep. Archives: CPM2011-119 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A oxide layer was deposited on a SiC surface by thermal chemical vapor deposition as a source material TEOS. After the deposition of the oxide layer , samples were annealed in N$_2$ atmosphere and H$_2$ atmosphere. The metal-oxide-semiconductor capacitor was formed to measure the interface properties between SiC surface and oxide layer and the properties of the defects in oxide layer. The lowest interface state density was obtained for the sample annealed N$_2$ atmosphere. The interface state density of those sample was 1.5$\times$ 10$^{11}$cm$^{-2}$eV$^{-1}$ at 0.2eV below the conduction band edge. The fixed oxide charge in oxide layer has been decreased by H$_2$ annealing. Annealed TEOS oxide layer will caused improvement of SiO$_2$/SiC interface properties and reduction of defects in oxide layer. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SiC / TEOS / MOS / interface states / fixed oxide charge / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 264, CPM2011-119, pp. 51-54, Oct. 2011. |
Paper # |
CPM2011-119 |
Date of Issue |
2011-10-19 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
CPM2011-119 Link to ES Tech. Rep. Archives: CPM2011-119 |
Conference Information |
Committee |
CPM |
Conference Date |
2011-10-26 - 2011-10-27 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Fukui Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
CPM |
Conference Code |
2011-10-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Preparation of SiC MOS structure using SiO2 Layer deposited by Thermal Decomposition of TEOS |
Sub Title (in English) |
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Keyword(1) |
SiC |
Keyword(2) |
TEOS |
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MOS |
Keyword(4) |
interface states |
Keyword(5) |
fixed oxide charge |
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1st Author's Name |
Mitsunori Hemmi |
1st Author's Affiliation |
Shinshu University (Shinshu Univ.) |
2nd Author's Name |
Yuya Iguchi |
2nd Author's Affiliation |
Shinshu University (Shinshu Univ.) |
3rd Author's Name |
Takashi Sakai |
3rd Author's Affiliation |
Shinshu University (Shinshu Univ.) |
4th Author's Name |
Akihiko Sugita |
4th Author's Affiliation |
Shinshu University (Shinshu Univ.) |
5th Author's Name |
Tomohiko Yamakami |
5th Author's Affiliation |
Shinshu University (Shinshu Univ.) |
6th Author's Name |
Rinpei Hayashibe |
6th Author's Affiliation |
Shinshu University (Shinshu Univ.) |
7th Author's Name |
Kiichi Kamimura |
7th Author's Affiliation |
Shinshu University (Shinshu Univ.) |
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Speaker |
Author-1 |
Date Time |
2011-10-27 09:55:00 |
Presentation Time |
25 minutes |
Registration for |
CPM |
Paper # |
CPM2011-119 |
Volume (vol) |
vol.111 |
Number (no) |
no.264 |
Page |
pp.51-54 |
#Pages |
4 |
Date of Issue |
2011-10-19 (CPM) |