Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2011-10-27 09:55
Preparation of SiC MOS structure using SiO2 Layer deposited by Thermal Decomposition of TEOS
Mitsunori Hemmi, Yuya Iguchi, Takashi Sakai, Akihiko Sugita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2011-119
Abstract (in Japanese) (See Japanese page) 
(in English) A oxide layer was deposited on a SiC surface by thermal chemical vapor deposition as a source material TEOS. After the deposition of the oxide layer , samples were annealed in N$_2$ atmosphere and H$_2$ atmosphere. The metal-oxide-semiconductor capacitor was formed to measure the interface properties between SiC surface and oxide layer and the properties of the defects in oxide layer. The lowest interface state density was obtained for the sample annealed N$_2$ atmosphere. The interface state density of those sample was 1.5$\times$ 10$^{11}$cm$^{-2}$eV$^{-1}$ at 0.2eV below the conduction band edge. The fixed oxide charge in oxide layer has been decreased by H$_2$ annealing. Annealed TEOS oxide layer will caused improvement of SiO$_2$/SiC interface properties and reduction of defects in oxide layer.
Keyword (in Japanese) (See Japanese page) 
(in English) SiC / TEOS / MOS / interface states / fixed oxide charge / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 264, CPM2011-119, pp. 51-54, Oct. 2011.
Paper # CPM2011-119 
Date of Issue 2011-10-19 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF CPM2011-119

Conference Information
Committee CPM  
Conference Date 2011-10-26 - 2011-10-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Fukui Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2011-10-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Preparation of SiC MOS structure using SiO2 Layer deposited by Thermal Decomposition of TEOS 
Sub Title (in English)  
Keyword(1) SiC  
Keyword(2) TEOS  
Keyword(3) MOS  
Keyword(4) interface states  
Keyword(5) fixed oxide charge  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Mitsunori Hemmi  
1st Author's Affiliation Shinshu University (Shinshu Univ.)
2nd Author's Name Yuya Iguchi  
2nd Author's Affiliation Shinshu University (Shinshu Univ.)
3rd Author's Name Takashi Sakai  
3rd Author's Affiliation Shinshu University (Shinshu Univ.)
4th Author's Name Akihiko Sugita  
4th Author's Affiliation Shinshu University (Shinshu Univ.)
5th Author's Name Tomohiko Yamakami  
5th Author's Affiliation Shinshu University (Shinshu Univ.)
6th Author's Name Rinpei Hayashibe  
6th Author's Affiliation Shinshu University (Shinshu Univ.)
7th Author's Name Kiichi Kamimura  
7th Author's Affiliation Shinshu University (Shinshu Univ.)
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2011-10-27 09:55:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2011-119 
Volume (vol) vol.111 
Number (no) no.264 
Page pp.51-54 
#Pages 4 
Date of Issue 2011-10-19 (CPM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan