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Paper Abstract and Keywords
Presentation 2011-10-27 10:20
MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content
Akihiro Mihara, Kenichi Sugita, Ashraful G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Noriyuki Watanabe, Naoteru Shigekawa (NTT Photonics Labs.) CPM2011-120
Abstract (in Japanese) (See Japanese page) 
(in English) This paper reports on the MOVPE growth of InxGa1-xN with x up to ~0.49 on AlN/Si(111) substrates. Single-crystalline InxGa1-xN films with x up to ~0.49 are successfully grown on Si(111) substrates without phase separation and metallic In incorporation by changing the growth temperature and TMI/(TMI+TEG) molar ratio. These works will allow us towards the fabrication of the future InGaN-Si tandem cell using MOVPE.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaN / Si(111) / MOVPE / / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 264, CPM2011-120, pp. 55-58, Oct. 2011.
Paper # CPM2011-120 
Date of Issue 2011-10-19 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2011-10-26 - 2011-10-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Fukui Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2011-10-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content 
Sub Title (in English)  
Keyword(1) InGaN  
Keyword(2) Si(111)  
Keyword(3) MOVPE  
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1st Author's Name Akihiro Mihara  
1st Author's Affiliation University of Fukui (Univ. of Fukui)
2nd Author's Name Kenichi Sugita  
2nd Author's Affiliation University of Fukui (Univ. of Fukui)
3rd Author's Name Ashraful G. Bhuiyan  
3rd Author's Affiliation University of Fukui (Univ. of Fukui)
4th Author's Name Akihiro Hashimoto  
4th Author's Affiliation University of Fukui (Univ. of Fukui)
5th Author's Name Akio Yamamoto  
5th Author's Affiliation University of Fukui (Univ. of Fukui)
6th Author's Name Noriyuki Watanabe  
6th Author's Affiliation NTT Photonics Laboratories (NTT Photonics Labs.)
7th Author's Name Naoteru Shigekawa  
7th Author's Affiliation NTT Photonics Laboratories (NTT Photonics Labs.)
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Speaker Author-1 
Date Time 2011-10-27 10:20:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2011-120 
Volume (vol) vol.111 
Number (no) no.264 
Page pp.55-58 
#Pages 4 
Date of Issue 2011-10-19 (CPM) 

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