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Paper Abstract and Keywords
Presentation 2011-11-10 13:50
[Invited Talk] Comprehensive Understanding of Random Telegraph Noise with Physics Based Simulation
Yusuke Higashi, Nobuyuki Momo, Hisayo S. Momose, Tatsuya Ohguro, Kazuya Matsuzawa (Toshiba) SDM2011-118
Abstract (in Japanese) (See Japanese page) 
(in English) Physical modeling of transient and frequency domain noise simulation for random telegraph noise (RTN) is conducted, considering discretized traps and energy transition in insulator. The models are implemented in a 3D device simulator to consider the device structure effect and bias effect universally. Trap density and trap distribution in insulator are predicted quantitatively with comparison of measured data and simulated data. In addition, we present negative pre-pulse effect for RTN reduction.
Keyword (in Japanese) (See Japanese page) 
(in English) RTN / Flicker / TCAD / Simulation / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 281, SDM2011-118, pp. 17-20, Nov. 2011.
Paper # SDM2011-118 
Date of Issue 2011-11-03 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2011-118

Conference Information
Committee SDM  
Conference Date 2011-11-10 - 2011-11-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit Simulations, etc 
Paper Information
Registration To SDM 
Conference Code 2011-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Comprehensive Understanding of Random Telegraph Noise with Physics Based Simulation 
Sub Title (in English)  
Keyword(1) RTN  
Keyword(2) Flicker  
Keyword(3) TCAD  
Keyword(4) Simulation  
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1st Author's Name Yusuke Higashi  
1st Author's Affiliation Toshiba Corporation (Toshiba)
2nd Author's Name Nobuyuki Momo  
2nd Author's Affiliation Toshiba Corporation (Toshiba)
3rd Author's Name Hisayo S. Momose  
3rd Author's Affiliation Toshiba Corporation (Toshiba)
4th Author's Name Tatsuya Ohguro  
4th Author's Affiliation Toshiba Corporation (Toshiba)
5th Author's Name Kazuya Matsuzawa  
5th Author's Affiliation Toshiba Corporation (Toshiba)
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Speaker Author-1 
Date Time 2011-11-10 13:50:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2011-118 
Volume (vol) vol.111 
Number (no) no.281 
Page pp.17-20 
#Pages 4 
Date of Issue 2011-11-03 (SDM) 

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