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Paper Abstract and Keywords
Presentation 2011-11-10 13:00
[Invited Talk] Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking
Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-117
Abstract (in Japanese) (See Japanese page) 
(in English) A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer deposited directly on the channel silicon layer in the PCM enables low-current reset operation (45 μA). A con-tactless simple cell structure makes it possible to reduce the cell size to 4F2 and the number of process steps. This memory-cell configuration enables both a poly-Si MOS-driven stackable memory array and large degree programming parallelization. Both low cost and gigabyte-per-second programming throughput are thus made possible by this stackable phase-change memory.
Keyword (in Japanese) (See Japanese page) 
(in English) phase-change memory / poly-Si MOS transistor / stackable / three-dimensional / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 281, SDM2011-117, pp. 11-15, Nov. 2011.
Paper # SDM2011-117 
Date of Issue 2011-11-03 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2011-11-10 - 2011-11-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit Simulations, etc 
Paper Information
Registration To SDM 
Conference Code 2011-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking 
Sub Title (in English)  
Keyword(1) phase-change memory  
Keyword(2) poly-Si MOS transistor  
Keyword(3) stackable  
Keyword(4) three-dimensional  
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Keyword(6)  
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1st Author's Name Yoshitaka Sasago  
1st Author's Affiliation Hitachi Ltd. (Hitachi)
2nd Author's Name Masaharu Kinoshita  
2nd Author's Affiliation Hitachi Ltd. (Hitachi)
3rd Author's Name Hiroyuki Minemura  
3rd Author's Affiliation Hitachi Ltd. (Hitachi)
4th Author's Name Yumiko Anzai  
4th Author's Affiliation Hitachi Ltd. (Hitachi)
5th Author's Name Mitsuharu Tai  
5th Author's Affiliation Hitachi Ltd. (Hitachi)
6th Author's Name Kenzo Kurotsuchi  
6th Author's Affiliation Hitachi Ltd. (Hitachi)
7th Author's Name Seiichi Morita  
7th Author's Affiliation Hitachi Ltd. (Hitachi)
8th Author's Name Toshikazu Takahashi  
8th Author's Affiliation Hitachi Ltd. (Hitachi)
9th Author's Name Takashi Takahama  
9th Author's Affiliation Hitachi Ltd. (Hitachi)
10th Author's Name Tadao Morimoto  
10th Author's Affiliation Hitachi Ltd. (Hitachi)
11th Author's Name Toshiyuki Mine  
11th Author's Affiliation Hitachi Ltd. (Hitachi)
12th Author's Name Akio Shima  
12th Author's Affiliation Hitachi Ltd. (Hitachi)
13th Author's Name Takashi Kobayashi  
13th Author's Affiliation Hitachi Ltd. (Hitachi)
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Speaker Author-1 
Date Time 2011-11-10 13:00:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2011-117 
Volume (vol) vol.111 
Number (no) no.281 
Page pp.11-15 
#Pages 5 
Date of Issue 2011-11-03 (SDM) 

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