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Paper Abstract and Keywords
Presentation 2012-04-27 15:40
[Invited Talk] Formation of Biaxially-Oriented Poly-Si Thin Films by Double-Line Beam Continuous-Wave Laser Lateral Crystallization for High-Performance TFT
Shin-Ichiro Kuroki (Tohoku Univ.) SDM2012-6 OME2012-6
Abstract (in Japanese) (See Japanese page) 
(in English) Poly-Si thin films with large crystal grains of 20×2μm2 were fabricated by continuous-wave laser lateral crystallization with Gaussian laser spot, and its high-performance TFT was also fabricated. Strain effects on the electron mobility were investigated with double-gate TFTs and tri-gate TFTs. Highly bi-axially oriented poly-Si thin films with very long grains were successfully fabricated on quartz substrates by double-line beam continuous wave laser crystallization. The newly-developed technique achieved highly-oriented silicon grains having {110}, {111} and {211} crystal orientations in the laser lateral crystallized plane, the transverse side plane and the surface plane, respectively. All the silicon grains were elongated in the laser-scanning direction and linearly arranged with a length of over 100 µm and a width of 0.7 µm. TFTs with this well-crystal oriented poly-Si thin films were also fabricated.
Keyword (in Japanese) (See Japanese page) 
(in English) TFT / Silicon / laser crystallization / crystal orientation / crystal boundary / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 18, SDM2012-6, pp. 27-32, April 2012.
Paper # SDM2012-6 
Date of Issue 2012-04-20 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2012-6 OME2012-6

Conference Information
Committee SDM OME  
Conference Date 2012-04-27 - 2012-04-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa-Ken-Seinen-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics 
Paper Information
Registration To SDM 
Conference Code 2012-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Formation of Biaxially-Oriented Poly-Si Thin Films by Double-Line Beam Continuous-Wave Laser Lateral Crystallization for High-Performance TFT 
Sub Title (in English)  
Keyword(1) TFT  
Keyword(2) Silicon  
Keyword(3) laser crystallization  
Keyword(4) crystal orientation  
Keyword(5) crystal boundary  
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1st Author's Name Shin-Ichiro Kuroki  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2012-04-27 15:40:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2012-6, OME2012-6 
Volume (vol) vol.112 
Number (no) no.18(SDM), no.19(OME) 
Page pp.27-32 
#Pages 6 
Date of Issue 2012-04-20 (SDM, OME) 

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