Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2012-04-27 16:50
Self-Aligned Planar Metal Double-Gate Polycrystalline-Silicon Thin-Film Transistors Fabricated at Low Temperature on Glass Substrate
Hiroyuki Ogata, Kenji Ichijo, Kenji Kondo, Yasunori Okabe, Yusuke Shika, Shinya Kamo, Akito Hara (Tohoku Gakuin Univ.) SDM2012-9 OME2012-9
Abstract (in Japanese) (See Japanese page) 
(in English) A multigate polycrystalline-silicon (poly-Si) thin-film transistor (TFT) is one of the recent topics in the field of Si devices. In this study, self-aligned planar metal double-gate poly-Si TFTs consisting of an embedded bottom metal gate, top metal gate fabricated by a self-alignment process, and a lateral poly-Si film with a grain size of more than 2 μm, were fabricated on a glass substrate at 550C. The nominal field-effect mobility of the n-channel TFT is 530 cm2/Vs and its subthreshold slope is 140 mV/dec. The performance of the proposed TFTs is superior to that of top-gate TFTs fabricated using equivalent processes.
Keyword (in Japanese) (See Japanese page) 
(in English) double-gate / poly-Si / TFT / / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 18, SDM2012-9, pp. 41-44, April 2012.
Paper # SDM2012-9 
Date of Issue 2012-04-20 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2012-9 OME2012-9

Conference Information
Committee SDM OME  
Conference Date 2012-04-27 - 2012-04-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa-Ken-Seinen-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics 
Paper Information
Registration To SDM 
Conference Code 2012-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Self-Aligned Planar Metal Double-Gate Polycrystalline-Silicon Thin-Film Transistors Fabricated at Low Temperature on Glass Substrate 
Sub Title (in English)  
Keyword(1) double-gate  
Keyword(2) poly-Si  
Keyword(3) TFT  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiroyuki Ogata  
1st Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
2nd Author's Name Kenji Ichijo  
2nd Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
3rd Author's Name Kenji Kondo  
3rd Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
4th Author's Name Yasunori Okabe  
4th Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
5th Author's Name Yusuke Shika  
5th Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
6th Author's Name Shinya Kamo  
6th Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
7th Author's Name Akito Hara  
7th Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2012-04-27 16:50:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2012-9, OME2012-9 
Volume (vol) vol.112 
Number (no) no.18(SDM), no.19(OME) 
Page pp.41-44 
#Pages 4 
Date of Issue 2012-04-20 (SDM, OME) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan