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Paper Abstract and Keywords
Presentation 2012-04-28 11:50
Crystallization of the Sputtered P-doped Si Films for High Performance Poly-Si TFT
Takuma Nishinohara, J. D. Mugiraneza, Katsuya Shirai, Toshiharu Suzuki, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus), Tadashi Ohachi (Doshisha Univ.), Hideki Matsushima, Takao Hashimoto, Yoshiaki Ogino, Eiji Sahota (Hitachi CP) SDM2012-18 OME2012-18
Abstract (in Japanese) (See Japanese page) 
(in English) After performing BLDA for phosphorus-doped Si films deposited by sputtering using Ne gas, the crystallinity of the films improved and sheet resistance decreased drastically. By applying the values of sheet resistance to source and drain region into the device simulation, remarkable improvement of TFT characteristics were seen for the TFTs of short channel length.
Keyword (in Japanese) (See Japanese page) 
(in English) sputtering / Si / BLDA / TFT / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 18, SDM2012-18, pp. 79-82, April 2012.
Paper # SDM2012-18 
Date of Issue 2012-04-20 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2012-18 OME2012-18

Conference Information
Committee SDM OME  
Conference Date 2012-04-27 - 2012-04-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa-Ken-Seinen-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics 
Paper Information
Registration To SDM 
Conference Code 2012-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Crystallization of the Sputtered P-doped Si Films for High Performance Poly-Si TFT 
Sub Title (in English)  
Keyword(1) sputtering  
Keyword(2) Si  
Keyword(3) BLDA  
Keyword(4) TFT  
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Keyword(6)  
Keyword(7)  
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1st Author's Name Takuma Nishinohara  
1st Author's Affiliation University of the Ryukyus (Univ. of the Ryukyus)
2nd Author's Name J. D. Mugiraneza  
2nd Author's Affiliation University of the Ryukyus (Univ. of the Ryukyus)
3rd Author's Name Katsuya Shirai  
3rd Author's Affiliation University of the Ryukyus (Univ. of the Ryukyus)
4th Author's Name Toshiharu Suzuki  
4th Author's Affiliation University of the Ryukyus (Univ. of the Ryukyus)
5th Author's Name Tatsuya Okada  
5th Author's Affiliation University of the Ryukyus (Univ. of the Ryukyus)
6th Author's Name Takashi Noguchi  
6th Author's Affiliation University of the Ryukyus (Univ. of the Ryukyus)
7th Author's Name Tadashi Ohachi  
7th Author's Affiliation Doshisha University (Doshisha Univ.)
8th Author's Name Hideki Matsushima  
8th Author's Affiliation Hitachi Computer Peripherals (Hitachi CP)
9th Author's Name Takao Hashimoto  
9th Author's Affiliation Hitachi Computer Peripherals (Hitachi CP)
10th Author's Name Yoshiaki Ogino  
10th Author's Affiliation Hitachi Computer Peripherals (Hitachi CP)
11th Author's Name Eiji Sahota  
11th Author's Affiliation Hitachi Computer Peripherals (Hitachi CP)
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Speaker Author-1 
Date Time 2012-04-28 11:50:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2012-18, OME2012-18 
Volume (vol) vol.112 
Number (no) no.18(SDM), no.19(OME) 
Page pp.79-82 
#Pages 4 
Date of Issue 2012-04-20 (SDM, OME) 

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