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Paper Abstract and Keywords
Presentation 2012-04-28 11:30
Electrical Characterization of SiO2 and SiN Films Deposited by RF Sputtering
Keisuke Yagi, Tatsuya Okada, Takashi Noguchi (Univ.Ryukyus) SDM2012-17 OME2012-17
Abstract (in Japanese) (See Japanese page) 
(in English) SiO2 and SiN films of 100 nm thickness were deposited on the Si substrate by RF sputtering. After thermal annealing, at 800℃, the leak current of SiO2 film was prominently reduced from 5.0×10-8 down to 3.5×10-10 A/cm2 at -5V. The leak current of SiN film was prominently reduced from 1.4×10-8 down to 5.8×10-10 A/cm2 at -5V. This result suggests that the quality of SiO2 and SiN film was effectively improved by thermal annealing.
Keyword (in Japanese) (See Japanese page) 
(in English) Sputtering / TFT / SiO2 / SiN / Gate insulator / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 18, SDM2012-17, pp. 75-77, April 2012.
Paper # SDM2012-17 
Date of Issue 2012-04-20 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2012-17 OME2012-17

Conference Information
Committee SDM OME  
Conference Date 2012-04-27 - 2012-04-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa-Ken-Seinen-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics 
Paper Information
Registration To SDM 
Conference Code 2012-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electrical Characterization of SiO2 and SiN Films Deposited by RF Sputtering 
Sub Title (in English)  
Keyword(1) Sputtering  
Keyword(2) TFT  
Keyword(3) SiO2  
Keyword(4) SiN  
Keyword(5) Gate insulator  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Keisuke Yagi  
1st Author's Affiliation University of the Ryukyus (Univ.Ryukyus)
2nd Author's Name Tatsuya Okada  
2nd Author's Affiliation University of the Ryukyus (Univ.Ryukyus)
3rd Author's Name Takashi Noguchi  
3rd Author's Affiliation University of the Ryukyus (Univ.Ryukyus)
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Speaker Author-1 
Date Time 2012-04-28 11:30:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2012-17, OME2012-17 
Volume (vol) vol.112 
Number (no) no.18(SDM), no.19(OME) 
Page pp.75-77 
#Pages 3 
Date of Issue 2012-04-20 (SDM, OME) 

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