Paper Abstract and Keywords |
Presentation |
2012-06-22 14:20
Electronic properties of ZnO thin films grown on a-sapphire substrates using high-energy H2O generated by a catalytic reaction
-- Analysis using a two layer model -- Eichi Nagatomi, Naoya Yamaguchi, Takahiro Kato (Nagaoka Univ. Technol.), Hironobu Umemoto (Shizuoka Univ.), Kanji Yasui (Nagaoka Univ. Technol.) EMD2012-9 CPM2012-26 OME2012-33 Link to ES Tech. Rep. Archives: EMD2012-9 CPM2012-26 OME2012-33 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Electrical properties of ZnO thin films, which were grown through a reaction between dimethylzinc and high-energy $H_2O$ produced by a Pt-catalyzed $H_2$ $O_2$ reaction, were measured. The films were grown directly on a-plane (11-20) sapphire substrates at 773 K without a buffer layer. As electron mobility increased with film thickness until approximately 3$\mu$m, it was presumed that the ZnO films were composed of an initial growth layer with high density of defects and an upper layer with excellent crystallinity. By using a two-layer model, we estimated the electron mobility in the upper layer. The electron mobility, however, cannot be completely revised by the two-layer model. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ZnO / CVD / / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 96, CPM2012-26, pp. 7-11, June 2012. |
Paper # |
CPM2012-26 |
Date of Issue |
2012-06-15 (EMD, CPM, OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
EMD2012-9 CPM2012-26 OME2012-33 Link to ES Tech. Rep. Archives: EMD2012-9 CPM2012-26 OME2012-33 |
Conference Information |
Committee |
EMD CPM OME |
Conference Date |
2012-06-22 - 2012-06-22 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Summer meeting for materials and devices |
Paper Information |
Registration To |
CPM |
Conference Code |
2012-06-EMD-CPM-OME |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Electronic properties of ZnO thin films grown on a-sapphire substrates using high-energy H2O generated by a catalytic reaction |
Sub Title (in English) |
Analysis using a two layer model |
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ZnO |
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CVD |
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1st Author's Name |
Eichi Nagatomi |
1st Author's Affiliation |
Nagaoka University of Technology (Nagaoka Univ. Technol.) |
2nd Author's Name |
Naoya Yamaguchi |
2nd Author's Affiliation |
Nagaoka University of Technology (Nagaoka Univ. Technol.) |
3rd Author's Name |
Takahiro Kato |
3rd Author's Affiliation |
Nagaoka University of Technology (Nagaoka Univ. Technol.) |
4th Author's Name |
Hironobu Umemoto |
4th Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
5th Author's Name |
Kanji Yasui |
5th Author's Affiliation |
Nagaoka University of Technology (Nagaoka Univ. Technol.) |
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Speaker |
Author-1 |
Date Time |
2012-06-22 14:20:00 |
Presentation Time |
25 minutes |
Registration for |
CPM |
Paper # |
EMD2012-9, CPM2012-26, OME2012-33 |
Volume (vol) |
vol.112 |
Number (no) |
no.95(EMD), no.96(CPM), no.97(OME) |
Page |
pp.7-11 |
#Pages |
5 |
Date of Issue |
2012-06-15 (EMD, CPM, OME) |
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