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Paper Abstract and Keywords
Presentation 2012-08-09 09:50
Low temperature deposition of SiNx thin films by radical-assisted reaction
Mayumi B. Takeyama, Masaru Sato (Kitami Inst. Technol.), Yoshihiro Nakata, Yasushi Kobayashi, Tomoji Nakamura (Fujitsu Lab. Ltd.), Atsushi Noya (Kitami Inst. Technol.) CPM2012-45
Abstract (in Japanese) (See Japanese page) 
(in English) 3-dimensional stacked LSI is of high interest to overcome the issues how to develop the integration density and/or functional value of LSIs without depending upon the scaling down of circuit size. Through-Si-Vias (TSVs) is an essential wiring technology to stack chips or wafers to form 3-D LSIs. In the ‘via last process’, it is exactly ideal, the TSV wiring is formed after performing all LSI processes. In this process, deposition of a SiNx film and a diffusion barrier should be executed at low temperatures below 200°C to avoid the deterioration of circuits already formed; however, this is one of the difficult issues, because a temperature of 300~350°C is required to form SiNx by the conventional processes reported so far. In this study, we propose a new deposition method, in which a sputter-deposited thin Si film is nitrided by assisting radical species. This method is already confirmed to be useful to form thin diffusion barrier of high performance at low temperatures. We can demonstrate the formation of thin SiNx films below 200°C. The intentional incorporation of carbon and oxygen atoms into the film is also available in this method. Subsequent deposition of SiNx and barrier layers at low temperatures is possible by the method, which provides a way to realize ‘via last process’ in TSV technology.
Keyword (in Japanese) (See Japanese page) 
(in English) 3-dimensional stacked LSI / Through Si via / SiNx film / low temperature process / radical reaction / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 175, CPM2012-45, pp. 51-54, Aug. 2012.
Paper # CPM2012-45 
Date of Issue 2012-08-01 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Conference Information
Committee CPM  
Conference Date 2012-08-08 - 2012-08-09 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2012-08-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low temperature deposition of SiNx thin films by radical-assisted reaction 
Sub Title (in English)  
Keyword(1) 3-dimensional stacked LSI  
Keyword(2) Through Si via  
Keyword(3) SiNx film  
Keyword(4) low temperature process  
Keyword(5) radical reaction  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Mayumi B. Takeyama  
1st Author's Affiliation Kitami Institute of Technology (Kitami Inst. Technol.)
2nd Author's Name Masaru Sato  
2nd Author's Affiliation Kitami Institute of Technology (Kitami Inst. Technol.)
3rd Author's Name Yoshihiro Nakata  
3rd Author's Affiliation Fujitsu Laboratories.Ltd. (Fujitsu Lab. Ltd.)
4th Author's Name Yasushi Kobayashi  
4th Author's Affiliation Fujitsu Laboratories.Ltd. (Fujitsu Lab. Ltd.)
5th Author's Name Tomoji Nakamura  
5th Author's Affiliation Fujitsu Laboratories.Ltd. (Fujitsu Lab. Ltd.)
6th Author's Name Atsushi Noya  
6th Author's Affiliation Kitami Institute of Technology (Kitami Inst. Technol.)
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Speaker Author-1 
Date Time 2012-08-09 09:50:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2012-45 
Volume (vol) vol.112 
Number (no) no.175 
Page pp.51-54 
#Pages 4 
Date of Issue 2012-08-01 (CPM) 

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