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Paper Abstract and Keywords
Presentation 2012-10-26 17:55
Interfacial reaction and/or diffusion in Cu/metal/SiO2/Si system (I) -- Diffusion behavior of Va transition metal --
Mayumi B. Takeyama, Atsushi Noya (Kitami Inst. of Technol.) CPM2012-103
Abstract (in Japanese) (See Japanese page) 
(in English) Cu multi-level interconnects in Si-LSIs require an effective barrier metal between Cu and a field insulating layer as a prerequisite for Cu interconnects of high performance. There is now a considerable amount of literature concerning the barrier properties of individual metals. However, it seems that few studies are known for the systematic investigation between barrier properties and the characteristics of barrier metals based on the consideration of chemical/physical properties originated from the classification of elements in the periodic table. Therefore, the diffusion/reaction behavior of the barrier metal in the Cu/metal/SiO2/Si model configuration, as a thermochemical system, is examined in the correlation with the characteristics of group metals in the periodic table. In this study, we examined V, Nb and Ta metals in the Va group in the periodic table, in which we clarify the barrier properties and characteristic behavior peculiar to this group, especially the diffusion behavior at the interfaces in the system. Among the metals examined, Nb is the most interesting in barrier property, on which the preferential orientation of Cu(111) is easily obtained and good adhesion to SiO2 is also favorable due to oxidation/reduction reaction with SiO2 underneath. In general, metals in the Va group are candidates for a good diffusion barrier.
Keyword (in Japanese) (See Japanese page) 
(in English) LSI / Cu interconnects / Va transition metal / diffusion / interfacial reaction / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 265, CPM2012-103, pp. 55-60, Oct. 2012.
Paper # CPM2012-103 
Date of Issue 2012-10-19 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Conference Information
Committee CPM  
Conference Date 2012-10-26 - 2012-10-27 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2012-10-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Interfacial reaction and/or diffusion in Cu/metal/SiO2/Si system (I) 
Sub Title (in English) Diffusion behavior of Va transition metal 
Keyword(1) LSI  
Keyword(2) Cu interconnects  
Keyword(3) Va transition metal  
Keyword(4) diffusion  
Keyword(5) interfacial reaction  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Mayumi B. Takeyama  
1st Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Technol.)
2nd Author's Name Atsushi Noya  
2nd Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Technol.)
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Speaker Author-1 
Date Time 2012-10-26 17:55:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2012-103 
Volume (vol) vol.112 
Number (no) no.265 
Page pp.55-60 
#Pages 6 
Date of Issue 2012-10-19 (CPM) 

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