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| Presentation | 2012-10-26 17:30 Formation of multi-phases of monosilicide and disilicide in Ni/Si system Atsushi Noya, Mayumi Takeyama, Masaru Sato, Susumu Tokuda (Kitami Inst. Technol.)  CPM2012-102 Link to ES Tech. Rep. Archives: CPM2012-102 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Abstract Silicides nucleation in a Ni/Si system was investigated. In this system, generally, a phase sequence of Ni2Si→NiSi→NiSi2 is found by increasing the reaction temperature. This is due to diffusion of Ni as a diffusing species into Si. The Ni diffusion brings about the formation of an amorphous alloy with a composition around the deepest eutectic point (46at.%Si：964℃), from which a Ni2Si phase nucleates. Then, we try to form the second deepest eutectic composition (56.2at.%Si：966℃) artificially in the interfacial layer with a Ni concentration gradient in a Ni/Si system specimen by depositing a Ni layer at 350°C. Then, the annealing of the specimen at 400°C successfully forms multi-phases of NiSi and NiSi2 located between the NiSi layer and Si. This suggests that the phase transition from NiSi to NiSi2 occurs not only by the nucleation limited process but also by some kinetic constraint. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Ni silicide / NiSi / NiSi2 / phase transition / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 265, CPM2012-102, pp. 49-53, Oct. 2012. | |
| Paper # | CPM2012-102 | |
| Date of Issue | 2012-10-19 (CPM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | CPM2012-102 Link to ES Tech. Rep. Archives: CPM2012-102 |
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| Conference Information | |
| Committee | CPM |
| Conference Date | 2012-10-26 - 2012-10-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2012-10-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of multi-phases of monosilicide and disilicide in Ni/Si system |
| Sub Title (in English) | |
| Keyword(1) | Ni silicide |
| Keyword(2) | NiSi |
| Keyword(3) | NiSi2 |
| Keyword(4) | phase transition |
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| 1st Author's Name | Atsushi Noya |
| 1st Author's Affiliation | Kitami Institute of Technology (Kitami Inst. Technol.) |
| 2nd Author's Name | Mayumi Takeyama |
| 2nd Author's Affiliation | Kitami Institute of Technology (Kitami Inst. Technol.) |
| 3rd Author's Name | Masaru Sato |
| 3rd Author's Affiliation | Kitami Institute of Technology (Kitami Inst. Technol.) |
| 4th Author's Name | Susumu Tokuda |
| 4th Author's Affiliation | Kitami Institute of Technology (Kitami Inst. Technol.) |
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| Speaker | Author-1 |
| Date Time | 2012-10-26 17:30:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | CPM2012-102 |
| Volume (vol) | vol.112 |
| Number (no) | no.265 |
| Page | pp.49-53 |
| #Pages | 5 |
| Date of Issue | 2012-10-19 (CPM) |
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