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Paper Abstract and Keywords
Presentation 2012-10-26 17:05
Interface between GaP and Si substrates prepared using metalorganic vapor phase epitaxy
Tatsuya Takagi, Ryo Miyahara, Yasushi Takano (Shizuoka Univ.) CPM2012-101
Abstract (in Japanese) (See Japanese page) 
(in English) GaP layers were grown on Si substrates 2° or 4°-misoriented toward (011) using metalorganic vapor phase epitaxy. The substrates were heated in a H2 flow before GaP nucleation. Growth was initiated by supplying Triethylgallium and PH3. The structures were characterized using atomic force microscopy (AFM) and transmission electron microscopy (TEM). Pits were found in several 20-nm thick GaP layers on Si substrates. The depth of a pit was over the thickness of the GaP layer. TEM observation confirmed that the pits penetrated the Si substrate. The pits depended on growth rate, reactor pressure, and PH3 flow rate.
Keyword (in Japanese) (See Japanese page) 
(in English) MOVPE / GaP / Si substrate / pit / antiphase domain / atomic force microscopy / transmission electron microscopy /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 265, CPM2012-101, pp. 45-48, Oct. 2012.
Paper # CPM2012-101 
Date of Issue 2012-10-19 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2012-10-26 - 2012-10-27 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2012-10-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Interface between GaP and Si substrates prepared using metalorganic vapor phase epitaxy 
Sub Title (in English)  
Keyword(1) MOVPE  
Keyword(2) GaP  
Keyword(3) Si substrate  
Keyword(4) pit  
Keyword(5) antiphase domain  
Keyword(6) atomic force microscopy  
Keyword(7) transmission electron microscopy  
Keyword(8)  
1st Author's Name Tatsuya Takagi  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Ryo Miyahara  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Yasushi Takano  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Speaker Author-3 
Date Time 2012-10-26 17:05:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2012-101 
Volume (vol) vol.112 
Number (no) no.265 
Page pp.45-48 
#Pages 4 
Date of Issue 2012-10-19 (CPM) 

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