Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2012-10-27 12:15
Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE
Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato, Hideyuki Toyota (Nagaoka Univ. Techno.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Techno.) CPM2012-111
Abstract (in Japanese) (See Japanese page) 
(in English) Ge nanodots were formed on Si(001)-2˚off substrates after the formation of Si c(4×4) structure by gas-source molecular beam epitaxy using monomethylgermane as a source gas. SiC capping layer was deposited on the Ge dots formed by various growth conditions and SiC/Ge dots/SiCx stacked structure was fabricated. After the fabrication of SiC/Ge dots/SiCx stacked structure, hydrogen radicals generated by a tungsten hot-wire were irradiated for the termination of dangling bonds in the Ge-dots/ SiC interface, aiming at the improvement of the optical emission efficiency. By the measurement of photoluminescence properties, however, optical emission from the SiC/Ge dots/SiCx stacked structure irradiated at low temperature was worse.
Keyword (in Japanese) (See Japanese page) 
(in English) gas-source MBE / Ge nanodot / SiC / photoluminescence / hydrogen radical / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 265, CPM2012-111, pp. 97-100, Oct. 2012.
Paper # CPM2012-111 
Date of Issue 2012-10-19 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF CPM2012-111

Conference Information
Committee CPM  
Conference Date 2012-10-26 - 2012-10-27 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2012-10-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE 
Sub Title (in English)  
Keyword(1) gas-source MBE  
Keyword(2) Ge nanodot  
Keyword(3) SiC  
Keyword(4) photoluminescence  
Keyword(5) hydrogen radical  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yutaka Anezaki  
1st Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Techno.)
2nd Author's Name Kai Sato  
2nd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Techno.)
3rd Author's Name Takahiro Kato  
3rd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Techno.)
4th Author's Name Ariyuki Kato  
4th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Techno.)
5th Author's Name Hideyuki Toyota  
5th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Techno.)
6th Author's Name Maki Suemitsu  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
7th Author's Name Hideki Nakazawa  
7th Author's Affiliation Hirosaki University (Hirosaki Univ.)
8th Author's Name Yuzuru Narita  
8th Author's Affiliation Yamagata University (Yamagata Univ.)
9th Author's Name Kanji Yasui  
9th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Techno.)
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2012-10-27 12:15:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2012-111 
Volume (vol) vol.112 
Number (no) no.265 
Page pp.97-100 
#Pages 4 
Date of Issue 2012-10-19 (CPM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan