Paper Abstract and Keywords |
Presentation |
2012-10-27 12:15
Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato, Hideyuki Toyota (Nagaoka Univ. Techno.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Techno.) CPM2012-111 Link to ES Tech. Rep. Archives: CPM2012-111 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Ge nanodots were formed on Si(001)-2˚off substrates after the formation of Si c(4×4) structure by gas-source molecular beam epitaxy using monomethylgermane as a source gas. SiC capping layer was deposited on the Ge dots formed by various growth conditions and SiC/Ge dots/SiCx stacked structure was fabricated. After the fabrication of SiC/Ge dots/SiCx stacked structure, hydrogen radicals generated by a tungsten hot-wire were irradiated for the termination of dangling bonds in the Ge-dots/ SiC interface, aiming at the improvement of the optical emission efficiency. By the measurement of photoluminescence properties, however, optical emission from the SiC/Ge dots/SiCx stacked structure irradiated at low temperature was worse. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
gas-source MBE / Ge nanodot / SiC / photoluminescence / hydrogen radical / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 265, CPM2012-111, pp. 97-100, Oct. 2012. |
Paper # |
CPM2012-111 |
Date of Issue |
2012-10-19 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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CPM2012-111 Link to ES Tech. Rep. Archives: CPM2012-111 |
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