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Presentation 2012-10-27 12:15
Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE
Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato, Hideyuki Toyota (Nagaoka Univ. Techno.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Techno.) CPM2012-111 Link to ES Tech. Rep. Archives: CPM2012-111
Abstract (in Japanese) (See Japanese page) 
(in English) Ge nanodots were formed on Si(001)-2˚off substrates after the formation of Si c(4×4) structure by gas-source molecular beam epitaxy using monomethylgermane as a source gas. SiC capping layer was deposited on the Ge dots formed by various growth conditions and SiC/Ge dots/SiCx stacked structure was fabricated. After the fabrication of SiC/Ge dots/SiCx stacked structure, hydrogen radicals generated by a tungsten hot-wire were irradiated for the termination of dangling bonds in the Ge-dots/ SiC interface, aiming at the improvement of the optical emission efficiency. By the measurement of photoluminescence properties, however, optical emission from the SiC/Ge dots/SiCx stacked structure irradiated at low temperature was worse.
Keyword (in Japanese) (See Japanese page) 
(in English) gas-source MBE / Ge nanodot / SiC / photoluminescence / hydrogen radical / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 265, CPM2012-111, pp. 97-100, Oct. 2012.
Paper # CPM2012-111 
Date of Issue 2012-10-19 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF CPM2012-111 Link to ES Tech. Rep. Archives: CPM2012-111

Conference Information
Committee CPM  
Conference Date 2012-10-26 - 2012-10-27 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2012-10-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE 
Sub Title (in English)  
Keyword(1) gas-source MBE  
Keyword(2) Ge nanodot  
Keyword(3) SiC  
Keyword(4) photoluminescence  
Keyword(5) hydrogen radical  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yutaka Anezaki  
1st Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Techno.)
2nd Author's Name Kai Sato  
2nd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Techno.)
3rd Author's Name Takahiro Kato  
3rd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Techno.)
4th Author's Name Ariyuki Kato  
4th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Techno.)
5th Author's Name Hideyuki Toyota  
5th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Techno.)
6th Author's Name Maki Suemitsu  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
7th Author's Name Hideki Nakazawa  
7th Author's Affiliation Hirosaki University (Hirosaki Univ.)
8th Author's Name Yuzuru Narita  
8th Author's Affiliation Yamagata University (Yamagata Univ.)
9th Author's Name Kanji Yasui  
9th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Techno.)
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Speaker Author-1 
Date Time 2012-10-27 12:15:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2012-111 
Volume (vol) vol.112 
Number (no) no.265 
Page pp.97-100 
#Pages
Date of Issue 2012-10-19 (CPM) 


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