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Paper Abstract and Keywords
Presentation 2013-08-01 14:10
Growth of (In)GaAsN thin films for Ultra High Efficiency Multi-Junction Solar Cells by Atomic Layer Epitaxy
Hidetoshi Suzuki, Tomohiro Haraguchi, Toshihiro Yamauchi, Atsuhiko Fukuyama, Tetsuo Ikari (Univ. of Miyazaki) CPM2013-41
Abstract (in Japanese) (See Japanese page) 
(in English) High quality GaAsN thin films were fabricated by atomic layer epitaxy (ALE). The effects of gas flow sequences
on self-limiting mechanism (SLM), N incorporation, and residual impurities were investigated as a first step to grow GaAsN
on precisely controlled surface by ALE. N precursor molecules were supplied to Ga (On-Ga) and As terminated surfaces
(On-As). The On-As case showed rough surface and their crystal qualities were not good. In On-Ga case, SLM functioned well
in whole growth temperature region and On-Ga sample showed low density of residual impurities. These demonstrated that
On-Ga sequence is effective to grow GaAsN thin films on precisely controlled surface by ALE technique.
Keyword (in Japanese) (See Japanese page) 
(in English) Multi-junction solar cells / dilute nitride / GaAsN / atomic layer epitaxy / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 171, CPM2013-41, pp. 11-15, Aug. 2013.
Paper # CPM2013-41 
Date of Issue 2013-07-25 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF CPM2013-41

Conference Information
Committee CPM  
Conference Date 2013-08-01 - 2013-08-02 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2013-08-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth of (In)GaAsN thin films for Ultra High Efficiency Multi-Junction Solar Cells by Atomic Layer Epitaxy 
Sub Title (in English)  
Keyword(1) Multi-junction solar cells  
Keyword(2) dilute nitride  
Keyword(3) GaAsN  
Keyword(4) atomic layer epitaxy  
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1st Author's Name Hidetoshi Suzuki  
1st Author's Affiliation University of Miyazaki (Univ. of Miyazaki)
2nd Author's Name Tomohiro Haraguchi  
2nd Author's Affiliation University of Miyazaki (Univ. of Miyazaki)
3rd Author's Name Toshihiro Yamauchi  
3rd Author's Affiliation University of Miyazaki (Univ. of Miyazaki)
4th Author's Name Atsuhiko Fukuyama  
4th Author's Affiliation University of Miyazaki (Univ. of Miyazaki)
5th Author's Name Tetsuo Ikari  
5th Author's Affiliation University of Miyazaki (Univ. of Miyazaki)
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Speaker Author-1 
Date Time 2013-08-01 14:10:00 
Presentation Time 20 minutes 
Registration for CPM 
Paper # CPM2013-41 
Volume (vol) vol.113 
Number (no) no.171 
Page pp.11-15 
#Pages 5 
Date of Issue 2013-07-25 (CPM) 

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