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Paper Abstract and Keywords
Presentation 2013-08-01 14:30
Formation Mechanism of Cubic-SiC by Carbonization of Si Surface
Yukimune Watanabe, Kiichi Kamimura (Shinshu Univ.) CPM2013-42
Abstract (in Japanese) (See Japanese page) 
(in English) SiC materials for high-power devices and high-frequency devices are actively developed. In this study, we focus on a cubic(3C)-SiC that can be formed by the low temperature process, and we investigated to form high quality epitaxial films on Si substrate. A thin carbonized layer was formed on the Si substrate before the deposition of SiC to improve the quality of the SiC film. The formation mechanism of the carbonized layer greatly influences the crystal quality of the heteroepitaxial film. The carbonization conditions were carefully examined to clarify the formation mechanism of the carbonized layer. As the results, we found that the carbonized films formed by two different mechanisms. At the initial stage, the carbonized layer was formed epitaxially by the reaction of the Si element sublimed from the Si substrate and the carbon element decomposed form the hydrocarbon gas. Then the carbonized layer was grown by the reaction of the Si substrate and the carbon element diffused to the interface through the crystal defects of the carbonized layer.
Keyword (in Japanese) (See Japanese page) 
(in English) Cubic-SiC / 3C-SiC / Wide Bandgap / Carbonization / Heteroepitaxial Growth / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 171, CPM2013-42, pp. 17-20, Aug. 2013.
Paper # CPM2013-42 
Date of Issue 2013-07-25 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2013-08-01 - 2013-08-02 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2013-08-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Formation Mechanism of Cubic-SiC by Carbonization of Si Surface 
Sub Title (in English)  
Keyword(1) Cubic-SiC  
Keyword(2) 3C-SiC  
Keyword(3) Wide Bandgap  
Keyword(4) Carbonization  
Keyword(5) Heteroepitaxial Growth  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yukimune Watanabe  
1st Author's Affiliation Shinshu University (Shinshu Univ.)
2nd Author's Name Kiichi Kamimura  
2nd Author's Affiliation Shinshu University (Shinshu Univ.)
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Speaker Author-1 
Date Time 2013-08-01 14:30:00 
Presentation Time 20 minutes 
Registration for CPM 
Paper # CPM2013-42 
Volume (vol) vol.113 
Number (no) no.171 
Page pp.17-20 
#Pages 4 
Date of Issue 2013-07-25 (CPM) 

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