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Paper Abstract and Keywords
Presentation 2013-08-02 10:00
Crystalline structure of ZnO thin films grown on a-plane sapphire substrates using high-energy H2O produced by a Pt-catalyzed H2-O2 reaction
Naoya Yamaguchi, Tomohiko Takeuchi, Tomoki Nakamura, Yuki Ohashi, Eichi Nagatomi, Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2013-49
Abstract (in Japanese) (See Japanese page) 
(in English) Crystalline structure of ZnO thin films, which were grown on a-plane sapphire substrates through a reaction between dimethylzinc and high-temperature H2O produced by a Pt-catalyzed H2-O2 reaction, was measured. From the thickness dependence of the electrical properties, the electron mobility at room temperature increased from 54 to 189 cm2/(Vs) with increasing film thickness from 200 nm to 2800 nm. The temperature dependences of the Hall mobility and carrier concentration of ZnO films with thinner than 500 nm and thicker than 500 nm were quite different. The existence of the layer with high-defect density near the film-substrate interface was estimated. In this study, the crystalline structure of the ZnO film with 5 μm thickness grown on the a-plane sapphire substrates was observed using cross-sectional transmission electron microscopy (TEM). The dislocation density in the films was also evaluated under two-beam condition.
Keyword (in Japanese) (See Japanese page) 
(in English) ZnO / catalytic reaction / high-temperature H2O / crystalline structure / dislocation / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 171, CPM2013-49, pp. 51-56, Aug. 2013.
Paper # CPM2013-49 
Date of Issue 2013-07-25 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2013-08-01 - 2013-08-02 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2013-08-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Crystalline structure of ZnO thin films grown on a-plane sapphire substrates using high-energy H2O produced by a Pt-catalyzed H2-O2 reaction 
Sub Title (in English)  
Keyword(1) ZnO  
Keyword(2) catalytic reaction  
Keyword(3) high-temperature H2O  
Keyword(4) crystalline structure  
Keyword(5) dislocation  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Naoya Yamaguchi  
1st Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
2nd Author's Name Tomohiko Takeuchi  
2nd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
3rd Author's Name Tomoki Nakamura  
3rd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
4th Author's Name Yuki Ohashi  
4th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
5th Author's Name Eichi Nagatomi  
5th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
6th Author's Name Yasuhiro Tamayama  
6th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
7th Author's Name Kanji Yasui  
7th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
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Speaker Author-7 
Date Time 2013-08-02 10:00:00 
Presentation Time 20 minutes 
Registration for CPM 
Paper # CPM2013-49 
Volume (vol) vol.113 
Number (no) no.171 
Page pp.51-56 
#Pages 6 
Date of Issue 2013-07-25 (CPM) 

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