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Paper Abstract and Keywords
Presentation 2013-10-24 16:55
Properties of SiNx films prepared by low process temperature
Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Tech.), Yoshihiro Nakata, Yasushi Kobayashi, Tomoji Nakamura (FUJITSU LAB.), Atsushi Noya (Kitami Inst. of Tech.) CPM2013-100
Abstract (in Japanese) (See Japanese page) 
(in English) 3-dimensional stacked LSI is attracted much attention to solve the issues how to develop the integration density and/or functional variety of LSI without depending on the scaling down of the circuit size alone. Through-Si-Via (TSV) is an essential wiring technology to form a stack of chips or wafers in 3-D LSI. We examine the characterization of SiNx films deposited by reactive-sputtering and PECVD at low temperatures as an insulating barrier applicable to TSV. Features of prepared SiNx films, such as film density, refractive index, composition, are dependent on the ratio of the amount of Si-N chemical bonds to those of Si-O and Si-Si bonds in the film. It is revealed that the higher ratio of the Si-N bonds in the film is important factor for good density and/or refractive index of the film.
Keyword (in Japanese) (See Japanese page) 
(in English) 3-dimensional stacked LSI / Through Si via / SiNx film / low temperature process / reactive sputtering / PECVD / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 268, CPM2013-100, pp. 35-39, Oct. 2013.
Paper # CPM2013-100 
Date of Issue 2013-10-17 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2013-10-24 - 2013-10-25 
Place (in Japanese) (See Japanese page) 
Place (in English) Niigata Univ. Satellite Campus TOKIMEITO 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Preparation of Thin Films, Materials for Physics and Applications, etc. 
Paper Information
Registration To CPM 
Conference Code 2013-10-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Properties of SiNx films prepared by low process temperature 
Sub Title (in English)  
Keyword(1) 3-dimensional stacked LSI  
Keyword(2) Through Si via  
Keyword(3) SiNx film  
Keyword(4) low temperature process  
Keyword(5) reactive sputtering  
Keyword(6) PECVD  
Keyword(7)  
Keyword(8)  
1st Author's Name Mayumi B. Takeyama  
1st Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Tech.)
2nd Author's Name Masaru Sato  
2nd Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Tech.)
3rd Author's Name Yoshihiro Nakata  
3rd Author's Affiliation FUJITSU LABORATORIES LTD. (FUJITSU LAB.)
4th Author's Name Yasushi Kobayashi  
4th Author's Affiliation FUJITSU LABORATORIES LTD. (FUJITSU LAB.)
5th Author's Name Tomoji Nakamura  
5th Author's Affiliation FUJITSU LABORATORIES LTD. (FUJITSU LAB.)
6th Author's Name Atsushi Noya  
6th Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Tech.)
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Speaker Author-1 
Date Time 2013-10-24 16:55:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2013-100 
Volume (vol) vol.113 
Number (no) no.268 
Page pp.35-39 
#Pages 5 
Date of Issue 2013-10-17 (CPM) 

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