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Paper Abstract and Keywords
Presentation 2013-11-28 11:50
Bow management of substrate for nitride semiconductor devices by internally focused laser processing -- application to silicon substrate --
Natsuko Aota, Hideo Aida, Hidetoshi Takeda (Namiki Precision Jewel) ED2013-67 CPM2013-126 LQE2013-102
Abstract (in Japanese) (See Japanese page) 
(in English) Bow management for heteroepitaxy of III-Nitride films on silicon substrate has been required, as substrate bow is introduced during and after heteroepitaxial growth. We investigated bow management technique for silicon substrate before and after GaN film growth by using internally focused laser. The substrate inside is modified by the laser and then stress is introduced inside the substrate, resulting in substrate bow. Modified layers were introduced into silicon substrate inside under various conditions to study bow control system of silicon substrate. As a result, it was found that the substrate bow can be controlled by depth of modified layers in substrate thickness and pattern pitch of modified layers. It was also suggested that the substrate bow during GaN film growth on silicon substrate can be controlled by applying initial bow. We applied the laser process to bow control of GaN on Silicon substrate to compensate stress induced by GaN films. We revealed that the substrate bow of GaN on Silicon substrate can be controlled by pattern pitch of modified layers.
Keyword (in Japanese) (See Japanese page) 
(in English) Heteroepitaxial growth / Internally focused laser / GaN on Silicon / / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 329, ED2013-67, pp. 17-20, Nov. 2013.
Paper # ED2013-67 
Date of Issue 2013-11-21 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2013-67 CPM2013-126 LQE2013-102

Conference Information
Committee CPM LQE ED  
Conference Date 2013-11-28 - 2013-11-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English) Ｎｉｔｒide and Compound Semiconductor Devices 
Paper Information
Registration To ED 
Conference Code 2013-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Bow management of substrate for nitride semiconductor devices by internally focused laser processing 
Sub Title (in English) application to silicon substrate 
Keyword(1) Heteroepitaxial growth  
Keyword(2) Internally focused laser  
Keyword(3) GaN on Silicon  
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1st Author's Name Natsuko Aota  
1st Author's Affiliation Namiki Precision Jewel Co.LTD (Namiki Precision Jewel)
2nd Author's Name Hideo Aida  
2nd Author's Affiliation Namiki Precision Jewel Co.LTD (Namiki Precision Jewel)
3rd Author's Name Hidetoshi Takeda  
3rd Author's Affiliation Namiki Precision Jewel Co.LTD (Namiki Precision Jewel)
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Speaker Author-1 
Date Time 2013-11-28 11:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2013-67, CPM2013-126, LQE2013-102 
Volume (vol) vol.113 
Number (no) no.329(ED), no.330(CPM), no.331(LQE) 
Page pp.17-20 
#Pages 4 
Date of Issue 2013-11-21 (ED, CPM, LQE) 

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