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| Presentation | 2014-02-28 10:10 [Invited Talk] Trend of practical technology in advanced low-k integration Naoya Inoue (Renesas Electronics Corp.)  SDM2013-166 Link to ES Tech. Rep. Archives: SDM2013-166 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Looking at the trend in Cu/Low-k interconnect technology, integration issues and solutions are discussed from the viewpoint of low-k material and process. Lowering k-number of ULK is facing the issues about CPI (chip-package interaction) and PID (plasma induced damage) which degrade the reliability of integrated interconnects. CPI can be improved by controlling microstructure of the film and process optimizations, and low porosity and high carbon can improve the immunity against plasma process. These are verified through actual integration of the ULKs with k~2.5. Especially, low effective capacitance is demonstrated for low PID film by using 80 nm pitch integration, comparing with other ULKs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | interconnect / low-k / scaling / delay / CPI (chip-package interaction) / PID (plasma-induced damage) / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 451, SDM2013-166, pp. 7-12, Feb. 2014. | |
| Paper # | SDM2013-166 | |
| Date of Issue | 2014-02-21 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2013-166 Link to ES Tech. Rep. Archives: SDM2013-166 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2014-02-28 - 2014-02-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2014-02-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Trend of practical technology in advanced low-k integration |
| Sub Title (in English) | |
| Keyword(1) | interconnect |
| Keyword(2) | low-k |
| Keyword(3) | scaling |
| Keyword(4) | delay |
| Keyword(5) | CPI (chip-package interaction) |
| Keyword(6) | PID (plasma-induced damage) |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Naoya Inoue |
| 1st Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics Corp.) |
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| Speaker | Author-1 |
| Date Time | 2014-02-28 10:10:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2013-166 |
| Volume (vol) | vol.113 |
| Number (no) | no.451 |
| Page | pp.7-12 |
| #Pages | 6 |
| Date of Issue | 2014-02-21 (SDM) |
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