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| Presentation | 2014-05-29 11:15 Surface treatment and homoepitaxial growth on AlN substrate Yoshinobu Watanabe, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yosuke Iwasaki (JFE Mineral)  ED2014-37 CPM2014-20 SDM2014-35 Link to ES Tech. Rep. Archives: ED2014-37 CPM2014-20 SDM2014-35 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Aluminum nitride (AlN) attracted as a substrate for not only light-emitting diodes and detectors operating in the deep-ultraviolet region but also high-power and high-frequency power devices. Owing to the well-established hydride vapor phase epitaxy (HVPE) techniques of thick AlN layer in recent years, the fabrication of low-density AlN films by homoepitaxial growth is expected. As a result of AlN growth on a freestanding AlN substrate fabricated by the sublimation method, we previously reported that cracks occurred despite the homoepitaxial growth. This may be due to the presence of grains and the surface damage caused by polishing. In this study, for the purpose of producing crack-free and high-quality AlN films, we conducted surface treatment and homoepitaxial growth on freestanding AlN substrates. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlN / freestanding substrate / surface treatment / homoepitaxial growth / hydride vapor phase epitaxy / trench substrate / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 57, CPM2014-20, pp. 97-100, May 2014. | |
| Paper # | CPM2014-20 | |
| Date of Issue | 2014-05-21 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2014-37 CPM2014-20 SDM2014-35 Link to ES Tech. Rep. Archives: ED2014-37 CPM2014-20 SDM2014-35 |
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| Conference Information | |
| Committee | CPM ED SDM |
| Conference Date | 2014-05-28 - 2014-05-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2014-05-CPM-ED-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Surface treatment and homoepitaxial growth on AlN substrate |
| Sub Title (in English) | |
| Keyword(1) | AlN |
| Keyword(2) | freestanding substrate |
| Keyword(3) | surface treatment |
| Keyword(4) | homoepitaxial growth |
| Keyword(5) | hydride vapor phase epitaxy |
| Keyword(6) | trench substrate |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yoshinobu Watanabe |
| 1st Author's Affiliation | Mie University (Mie Univ.) |
| 2nd Author's Name | Hideto Miyake |
| 2nd Author's Affiliation | Mie University (Mie Univ.) |
| 3rd Author's Name | Kazumasa Hiramatsu |
| 3rd Author's Affiliation | Mie University (Mie Univ.) |
| 4th Author's Name | Yosuke Iwasaki |
| 4th Author's Affiliation | JFE Mineral Company (JFE Mineral) |
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| Speaker | Author-1 |
| Date Time | 2014-05-29 11:15:00 |
| Presentation Time | 20 minutes |
| Registration for | CPM |
| Paper # | ED2014-37, CPM2014-20, SDM2014-35 |
| Volume (vol) | vol.114 |
| Number (no) | no.56(ED), no.57(CPM), no.58(SDM) |
| Page | pp.97-100 |
| #Pages | 4 |
| Date of Issue | 2014-05-21 (ED, CPM, SDM) |
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