IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2014-05-29 11:15
Surface treatment and homoepitaxial growth on AlN substrate
Yoshinobu Watanabe, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yosuke Iwasaki (JFE Mineral) ED2014-37 CPM2014-20 SDM2014-35 Link to ES Tech. Rep. Archives: ED2014-37 CPM2014-20 SDM2014-35
Abstract (in Japanese) (See Japanese page) 
(in English) Aluminum nitride (AlN) attracted as a substrate for not only light-emitting diodes and detectors operating in the deep-ultraviolet region but also high-power and high-frequency power devices. Owing to the well-established hydride vapor phase epitaxy (HVPE) techniques of thick AlN layer in recent years, the fabrication of low-density AlN films by homoepitaxial growth is expected. As a result of AlN growth on a freestanding AlN substrate fabricated by the sublimation method, we previously reported that cracks occurred despite the homoepitaxial growth. This may be due to the presence of grains and the surface damage caused by polishing. In this study, for the purpose of producing crack-free and high-quality AlN films, we conducted surface treatment and homoepitaxial growth on freestanding AlN substrates.
Keyword (in Japanese) (See Japanese page) 
(in English) AlN / freestanding substrate / surface treatment / homoepitaxial growth / hydride vapor phase epitaxy / trench substrate / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 57, CPM2014-20, pp. 97-100, May 2014.
Paper # CPM2014-20 
Date of Issue 2014-05-21 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-37 CPM2014-20 SDM2014-35 Link to ES Tech. Rep. Archives: ED2014-37 CPM2014-20 SDM2014-35

Conference Information
Committee CPM ED SDM  
Conference Date 2014-05-28 - 2014-05-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2014-05-CPM-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Surface treatment and homoepitaxial growth on AlN substrate 
Sub Title (in English)  
Keyword(1) AlN  
Keyword(2) freestanding substrate  
Keyword(3) surface treatment  
Keyword(4) homoepitaxial growth  
Keyword(5) hydride vapor phase epitaxy  
Keyword(6) trench substrate  
1st Author's Name Yoshinobu Watanabe  
1st Author's Affiliation Mie University (Mie Univ.)
2nd Author's Name Hideto Miyake  
2nd Author's Affiliation Mie University (Mie Univ.)
3rd Author's Name Kazumasa Hiramatsu  
3rd Author's Affiliation Mie University (Mie Univ.)
4th Author's Name Yosuke Iwasaki  
4th Author's Affiliation JFE Mineral Company (JFE Mineral)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2014-05-29 11:15:00 
Presentation Time 20 minutes 
Registration for CPM 
Paper # ED2014-37, CPM2014-20, SDM2014-35 
Volume (vol) vol.114 
Number (no) no.56(ED), no.57(CPM), no.58(SDM) 
Page pp.97-100 
Date of Issue 2014-05-21 (ED, CPM, SDM) 

[Return to Top Page]

[Return to IEICE Web Page]

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan