Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2014-09-04 13:55
SiC heteroepitaxial growth on an AlN layer formed on off-axis Si(001) substrates
Kazuki Meguro, Tsugutada Narita, Toshihiro Uemura, Hideki Nakazawa (Hirosaki Univ.) CPM2014-76
Abstract (in Japanese) (See Japanese page) 
(in English) We have grown aluminum nitride (AlN) films on 4º off-axis Si(100) and Si(110) substrates by pulsed laser deposition using an AlN target, and investigated the crystallinity and surface morphology of the grown films. We have also formed a SiC interfacial buffer layer on AlN/Si substrates at a low temperature by ultralow-pressure chemical vapor deposition using monomethylsilane (CH3SiH3; MMS), and grew 3C-SiC films on the buffer layer by pulsed laser deposition using a SiC target. The crystallinity of the films was evaluated by reflection high-energy electron diffraction and X-ray diffraction. The surface morphology of the films was observed by atomic force microscopy. We obtained the AlN layer with the best crystallinity on 4º off-axis Si(100) substrate at a laser intensity of 150 mJ. Moreover, we obtained the highly qualified SiC film with a smooth surface on the SiC buffer layer on the AlN layer. The AlN film with the best crystallinity was grown on Si (110) substrate at a laser intensity of 150 mJ, 750ºC, and a N2 pressure of 1 Pa.
Keyword (in Japanese) (See Japanese page) 
(in English) Aluminum nitride / Silicon Carbide / heteroepitaxy / Pulsed laser deposition / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 202, CPM2014-76, pp. 7-12, Sept. 2014.
Paper # CPM2014-76 
Date of Issue 2014-08-28 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF CPM2014-76

Conference Information
Committee CPM  
Conference Date 2014-09-04 - 2014-09-05 
Place (in Japanese) (See Japanese page) 
Place (in English) The 100th Anniversary Hall, Yamagata University 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2014-09-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) SiC heteroepitaxial growth on an AlN layer formed on off-axis Si(001) substrates 
Sub Title (in English)  
Keyword(1) Aluminum nitride  
Keyword(2) Silicon Carbide  
Keyword(3) heteroepitaxy  
Keyword(4) Pulsed laser deposition  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kazuki Meguro  
1st Author's Affiliation Hirosaki University (Hirosaki Univ.)
2nd Author's Name Tsugutada Narita  
2nd Author's Affiliation Hirosaki University (Hirosaki Univ.)
3rd Author's Name Toshihiro Uemura  
3rd Author's Affiliation Hirosaki University (Hirosaki Univ.)
4th Author's Name Hideki Nakazawa  
4th Author's Affiliation Hirosaki University (Hirosaki Univ.)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2014-09-04 13:55:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2014-76 
Volume (vol) vol.114 
Number (no) no.202 
Page pp.7-12 
#Pages 6 
Date of Issue 2014-08-28 (CPM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan