講演抄録/キーワード |
講演名 |
2014-09-05 10:45
RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma ○P. Pungboon Pansila・Kensaku Kanomata・Bashir Ahmmad Arima・Shigeru Kubota・Fumihiko Hirose(Yamagata Univ.) CPM2014-86 エレソ技報アーカイブへのリンク:CPM2014-86 |
抄録 |
(和) |
(まだ登録されていません) |
(英) |
Gallium oxide is expected as a channel material for thin film transistors. In the conventional technologies, gallium oxide has been tried to be fabricated by atomic layer deposition (ALD) at high temperatures from 100-450 °C, although the room-temperature (RT) growth has not been developed. In this work, we developed the RT ALD of gallium oxide by using a remote plasma technique. We studied trimethylgallium (TMG) adsorption and its oxidization on gallium oxide surfaces at RT by infrared absorption spectroscopy (IRAS). Based on the adsorption and oxidization characteristics, we designed the room temperature ALD of Ga2O3. The IRAS indicated that TMG adsorbs on the gallium oxide surface by consuming the adsorption sites of surface hydroxyl groups even at RT and the remote plasma-excited water and oxygen vapor is effective in oxidizing the TMG adsorbed surface as well as regeneration of the adsorption sites for TMG. We successfully prepared Ga2O3 films on Si-substrates at RT with a growth per cycle of 0.042 nm/cycle. |
キーワード |
(和) |
/ / / / / / / |
(英) |
gallium oxide / trimethylgallium / remote plasma / IR absorption spectroscopy / adsorption / oxidization / / |
文献情報 |
信学技報, vol. 114, no. 202, CPM2014-86, pp. 59-64, 2014年9月. |
資料番号 |
CPM2014-86 |
発行日 |
2014-08-28 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
CPM2014-86 エレソ技報アーカイブへのリンク:CPM2014-86 |