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Paper Abstract and Keywords
Presentation 2014-09-05 10:45
RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
P. Pungboon Pansila, Kensaku Kanomata, Bashir Ahmmad Arima, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) CPM2014-86 Link to ES Tech. Rep. Archives: CPM2014-86
Abstract (in Japanese) (See Japanese page) 
(in English) Gallium oxide is expected as a channel material for thin film transistors. In the conventional technologies, gallium oxide has been tried to be fabricated by atomic layer deposition (ALD) at high temperatures from 100-450 °C, although the room-temperature (RT) growth has not been developed. In this work, we developed the RT ALD of gallium oxide by using a remote plasma technique. We studied trimethylgallium (TMG) adsorption and its oxidization on gallium oxide surfaces at RT by infrared absorption spectroscopy (IRAS). Based on the adsorption and oxidization characteristics, we designed the room temperature ALD of Ga2O3. The IRAS indicated that TMG adsorbs on the gallium oxide surface by consuming the adsorption sites of surface hydroxyl groups even at RT and the remote plasma-excited water and oxygen vapor is effective in oxidizing the TMG adsorbed surface as well as regeneration of the adsorption sites for TMG. We successfully prepared Ga2O3 films on Si-substrates at RT with a growth per cycle of 0.042 nm/cycle.
Keyword (in Japanese) (See Japanese page) 
(in English) gallium oxide / trimethylgallium / remote plasma / IR absorption spectroscopy / adsorption / oxidization / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 202, CPM2014-86, pp. 59-64, Sept. 2014.
Paper # CPM2014-86 
Date of Issue 2014-08-28 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2014-09-04 - 2014-09-05 
Place (in Japanese) (See Japanese page) 
Place (in English) The 100th Anniversary Hall, Yamagata University 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2014-09-CPM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma 
Sub Title (in English)  
Keyword(1) gallium oxide  
Keyword(2) trimethylgallium  
Keyword(3) remote plasma  
Keyword(4) IR absorption spectroscopy  
Keyword(5) adsorption  
Keyword(6) oxidization  
1st Author's Name P. Pungboon Pansila  
1st Author's Affiliation Yamagata University (Yamagata Univ.)
2nd Author's Name Kensaku Kanomata  
2nd Author's Affiliation Yamagata University (Yamagata Univ.)
3rd Author's Name Bashir Ahmmad Arima  
3rd Author's Affiliation Yamagata University (Yamagata Univ.)
4th Author's Name Shigeru Kubota  
4th Author's Affiliation Yamagata University (Yamagata Univ.)
5th Author's Name Fumihiko Hirose  
5th Author's Affiliation Yamagata University (Yamagata Univ.)
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Speaker Author-1 
Date Time 2014-09-05 10:45:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2014-86 
Volume (vol) vol.114 
Number (no) no.202 
Page pp.59-64 
Date of Issue 2014-08-28 (CPM) 

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