Paper Abstract and Keywords |
Presentation |
2014-10-24 15:20
Effect of Post-Deposition Annealing in Hydrogen Atmosphere on 4H-SiCMIS Property Prepared by Thermal CVD Method Using Tetraethylorthosilicate Takuo Kanou, Yoshiyuki Akahane, Yuta Kobayashi, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.) CPM2014-109 Link to ES Tech. Rep. Archives: CPM2014-109 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Silicon dioxide films were deposited by the thermal decomposition of tetraethylorthosilicate (TEOS) to form the MIS structure, and were annealed in hydrogen ambient to improve the quality of TEOS-SiO2/SiC MIS interface. The quality of the film was improved by annealing in hydrogen ambient after deposition, and the interface state density was greatly reduced. Defects seemed to be formed at the interface between SiO2 and SiC during the annealing in N2 by the reaction of residual TEOS molecules in the SiO2 film with the SiC surface. The interface property was improved by the annealing in H2. This may be because no oxidation occurred and defects were terminated by H atoms during annealing in H2. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
TEOS / SiC / MOS / CVD / annealing / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 276, CPM2014-109, pp. 25-28, Oct. 2014. |
Paper # |
CPM2014-109 |
Date of Issue |
2014-10-17 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
CPM2014-109 Link to ES Tech. Rep. Archives: CPM2014-109 |
Conference Information |
Committee |
CPM |
Conference Date |
2014-10-24 - 2014-10-25 |
Place (in Japanese) |
(See Japanese page) |
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Topics (in Japanese) |
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Paper Information |
Registration To |
CPM |
Conference Code |
2014-10-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Effect of Post-Deposition Annealing in Hydrogen Atmosphere on 4H-SiCMIS Property Prepared by Thermal CVD Method Using Tetraethylorthosilicate |
Sub Title (in English) |
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Keyword(1) |
TEOS |
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SiC |
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MOS |
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CVD |
Keyword(5) |
annealing |
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1st Author's Name |
Takuo Kanou |
1st Author's Affiliation |
Shinshu University (Shinshu Univ.) |
2nd Author's Name |
Yoshiyuki Akahane |
2nd Author's Affiliation |
Shinshu University (Shinshu Univ.) |
3rd Author's Name |
Yuta Kobayashi |
3rd Author's Affiliation |
Shinshu University (Shinshu Univ.) |
4th Author's Name |
Tomohiko Yamakami |
4th Author's Affiliation |
Shinshu University (Shinshu Univ.) |
5th Author's Name |
Kiichi Kamimura |
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Shinshu University (Shinshu Univ.) |
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Speaker |
Author-1 |
Date Time |
2014-10-24 15:20:00 |
Presentation Time |
20 minutes |
Registration for |
CPM |
Paper # |
CPM2014-109 |
Volume (vol) |
vol.114 |
Number (no) |
no.276 |
Page |
pp.25-28 |
#Pages |
4 |
Date of Issue |
2014-10-17 (CPM) |