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| Presentation | 2014-12-12 17:00 Atomic Layer Deposition of Al2O3 Film Utilizing Water Vapor Plasma Oxidation Tomoaki Umehara, Masahiro Horita, Koji Yoshitsugu, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)  EID2014-36 SDM2014-131 Link to ES Tech. Rep. Archives: EID2014-36 SDM2014-131 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this paper, we reported Al2O3 insulation film deposited by atomic layer deposition(ALD) for application of GaN power devices. In the ALD for Al2O3 film deposition, we sugested to deposit Al2O3 film using plasma originated from water vapor for the oxidation process. We confirmed that the water vapor plasma assisted ALD leads to an increase in breakdown field and a decrease in gate leak current compared with the conventional thermal-ALD Al2O3 film. Optical emission spectrometry reveals that active species originated form water vapor were generated, which may contributes to the reaction. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Plasma assisted-atomic layer deposition / Al2O3 / water vapor plasma / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 360, SDM2014-131, pp. 119-123, Dec. 2014. | |
| Paper # | SDM2014-131 | |
| Date of Issue | 2014-12-05 (EID, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EID2014-36 SDM2014-131 Link to ES Tech. Rep. Archives: EID2014-36 SDM2014-131 |
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| Conference Information | |
| Committee | SDM EID |
| Conference Date | 2014-12-12 - 2014-12-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Si and Si-related Materials and Devices, Display Technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2014-12-SDM-EID |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Atomic Layer Deposition of Al2O3 Film Utilizing Water Vapor Plasma Oxidation |
| Sub Title (in English) | |
| Keyword(1) | Plasma assisted-atomic layer deposition |
| Keyword(2) | Al2O3 |
| Keyword(3) | water vapor plasma |
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| 1st Author's Name | Tomoaki Umehara |
| 1st Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 2nd Author's Name | Masahiro Horita |
| 2nd Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 3rd Author's Name | Koji Yoshitsugu |
| 3rd Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 4th Author's Name | Yasuaki Ishikawa |
| 4th Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 5th Author's Name | Yukiharu Uraoka |
| 5th Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
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| Speaker | Author-1 |
| Date Time | 2014-12-12 17:00:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | EID2014-36, SDM2014-131 |
| Volume (vol) | vol.114 |
| Number (no) | no.359(EID), no.360(SDM) |
| Page | pp.119-123 |
| #Pages | 5 |
| Date of Issue | 2014-12-05 (EID, SDM) |
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