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| Presentation | 2014-12-12 17:15 Study of driving forces that cause resistive switching of binary transition metal oxide memory Ryosuke Koishi, Takumi Moriyama, Kouhei Kimura, Kouki Kawano, Hidetoshi Miyashita, Sang-Seon Lee, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.)  EID2014-37 SDM2014-132 Link to ES Tech. Rep. Archives: EID2014-37 SDM2014-132 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | It is widely received that resistive switching of resistive random access memory (ReRAM) is caused by formation and rupture of conductive filament consisting of oxygen vacancies, Vos. However, driving forces that migrate oxygen vacancies have been not elucidated yet. In this study, we tried to separate driving forces that cause Vo diffusion, concentration gradient (concentration diffusion) and temperature gradient (thermodiffusion), by generating various temperature distribution around the filament by injecting voltage pulses with various wave forms. As a result, it was shown that concentration diffusion and thermodiffusion are always competing each other in ReRAM, and magnitude relation of concentration diffusion and thermodiffusion decides which reset occurs or set occurs is decided by the magnitude relation of concentration diffusion and thermodiffusion. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Resistive random access memory / ReRAM / concentration diffusion / thermodiffusion / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 360, SDM2014-132, pp. 125-128, Dec. 2014. | |
| Paper # | SDM2014-132 | |
| Date of Issue | 2014-12-05 (EID, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EID2014-37 SDM2014-132 Link to ES Tech. Rep. Archives: EID2014-37 SDM2014-132 |
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| Conference Information | |
| Committee | SDM EID |
| Conference Date | 2014-12-12 - 2014-12-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Si and Si-related Materials and Devices, Display Technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2014-12-SDM-EID |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study of driving forces that cause resistive switching of binary transition metal oxide memory |
| Sub Title (in English) | |
| Keyword(1) | Resistive random access memory |
| Keyword(2) | ReRAM |
| Keyword(3) | concentration diffusion |
| Keyword(4) | thermodiffusion |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Ryosuke Koishi |
| 1st Author's Affiliation | Tottori University (Tottori Univ.) |
| 2nd Author's Name | Takumi Moriyama |
| 2nd Author's Affiliation | Tottori University (Tottori Univ.) |
| 3rd Author's Name | Kouhei Kimura |
| 3rd Author's Affiliation | Tottori University (Tottori Univ.) |
| 4th Author's Name | Kouki Kawano |
| 4th Author's Affiliation | Tottori University (Tottori Univ.) |
| 5th Author's Name | Hidetoshi Miyashita |
| 5th Author's Affiliation | Tottori University (Tottori Univ.) |
| 6th Author's Name | Sang-Seon Lee |
| 6th Author's Affiliation | Tottori University (Tottori Univ.) |
| 7th Author's Name | Satoru Kishida |
| 7th Author's Affiliation | Tottori University (Tottori Univ.) |
| 8th Author's Name | Kentaro Kinoshita |
| 8th Author's Affiliation | Tottori University (Tottori Univ.) |
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| Speaker | Author-1 |
| Date Time | 2014-12-12 17:15:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | EID2014-37, SDM2014-132 |
| Volume (vol) | vol.114 |
| Number (no) | no.359(EID), no.360(SDM) |
| Page | pp.125-128 |
| #Pages | 4 |
| Date of Issue | 2014-12-05 (EID, SDM) |
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