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Paper Abstract and Keywords
Presentation 2014-12-12 17:15
Study of driving forces that cause resistive switching of binary transition metal oxide memory
Ryosuke Koishi, Takumi Moriyama, Kouhei Kimura, Kouki Kawano, Hidetoshi Miyashita, Sang-Seon Lee, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-37 SDM2014-132
Abstract (in Japanese) (See Japanese page) 
(in English) It is widely received that resistive switching of resistive random access memory (ReRAM) is caused by formation and rupture of conductive filament consisting of oxygen vacancies, Vos. However, driving forces that migrate oxygen vacancies have been not elucidated yet. In this study, we tried to separate driving forces that cause Vo diffusion, concentration gradient (concentration diffusion) and temperature gradient (thermodiffusion), by generating various temperature distribution around the filament by injecting voltage pulses with various wave forms. As a result, it was shown that concentration diffusion and thermodiffusion are always competing each other in ReRAM, and magnitude relation of concentration diffusion and thermodiffusion decides which reset occurs or set occurs is decided by the magnitude relation of concentration diffusion and thermodiffusion.
Keyword (in Japanese) (See Japanese page) 
(in English) Resistive random access memory / ReRAM / concentration diffusion / thermodiffusion / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 360, SDM2014-132, pp. 125-128, Dec. 2014.
Paper # SDM2014-132 
Date of Issue 2014-12-05 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2014-37 SDM2014-132

Conference Information
Committee SDM EID  
Conference Date 2014-12-12 - 2014-12-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Si and Si-related Materials and Devices, Display Technology 
Paper Information
Registration To SDM 
Conference Code 2014-12-SDM-EID 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Study of driving forces that cause resistive switching of binary transition metal oxide memory 
Sub Title (in English)  
Keyword(1) Resistive random access memory  
Keyword(2) ReRAM  
Keyword(3) concentration diffusion  
Keyword(4) thermodiffusion  
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Keyword(6)  
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1st Author's Name Ryosuke Koishi  
1st Author's Affiliation Tottori University (Tottori Univ.)
2nd Author's Name Takumi Moriyama  
2nd Author's Affiliation Tottori University (Tottori Univ.)
3rd Author's Name Kouhei Kimura  
3rd Author's Affiliation Tottori University (Tottori Univ.)
4th Author's Name Kouki Kawano  
4th Author's Affiliation Tottori University (Tottori Univ.)
5th Author's Name Hidetoshi Miyashita  
5th Author's Affiliation Tottori University (Tottori Univ.)
6th Author's Name Sang-Seon Lee  
6th Author's Affiliation Tottori University (Tottori Univ.)
7th Author's Name Satoru Kishida  
7th Author's Affiliation Tottori University (Tottori Univ.)
8th Author's Name Kentaro Kinoshita  
8th Author's Affiliation Tottori University (Tottori Univ.)
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Speaker Author-1 
Date Time 2014-12-12 17:15:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # EID2014-37, SDM2014-132 
Volume (vol) vol.114 
Number (no) no.359(EID), no.360(SDM) 
Page pp.125-128 
#Pages 4 
Date of Issue 2014-12-05 (EID, SDM) 

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