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| Presentation | 2014-12-12 13:30 Low-Temperature CLC Poly-Si TFTs with Sputtered HfO2 Gate Dielectric Layer Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.)  EID2014-23 SDM2014-118 Link to ES Tech. Rep. Archives: EID2014-23 SDM2014-118 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | To achieve high performance low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs), high-k gate dielectric of sputtered HfO2 was combined with high-quality lateral large-grained poly-Si thin film fabricated by continuous-wave laser lateral crystallization (CLC). The CET obtained from split CV method indicates 11 nm and HfO2 gate dielectric shows dielectric constant of 15. Field-effect mobility and S.S. of fabricated CLC LT poly-Si TFTs are 160 cm2/Vs and 200 mV/dec, respectively. Furthermore, drain current of the TFT was about 4 times higher than that of TFT with SiO2 gate dielectric. This result demonstrates feasibility of high-k CLC LT poly-Si TFTs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Thin film transistor / Low-temperature poly-Si TFT / Laser crystallization / SiO2 / Al2O3 / HfO2 / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 360, SDM2014-118, pp. 51-54, Dec. 2014. | |
| Paper # | SDM2014-118 | |
| Date of Issue | 2014-12-05 (EID, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EID2014-23 SDM2014-118 Link to ES Tech. Rep. Archives: EID2014-23 SDM2014-118 |
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| Conference Information | |
| Committee | SDM EID |
| Conference Date | 2014-12-12 - 2014-12-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Si and Si-related Materials and Devices, Display Technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2014-12-SDM-EID |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-Temperature CLC Poly-Si TFTs with Sputtered HfO2 Gate Dielectric Layer |
| Sub Title (in English) | |
| Keyword(1) | Thin film transistor |
| Keyword(2) | Low-temperature poly-Si TFT |
| Keyword(3) | Laser crystallization |
| Keyword(4) | SiO2 |
| Keyword(5) | Al2O3 |
| Keyword(6) | HfO2 |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Tatsuya Meguro |
| 1st Author's Affiliation | Tohoku Gakuin University (Tohoku Gakuin Univ.) |
| 2nd Author's Name | Akito Hara |
| 2nd Author's Affiliation | Tohoku Gakuin University (Tohoku Gakuin Univ.) |
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| Speaker | Author-1 |
| Date Time | 2014-12-12 13:30:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | EID2014-23, SDM2014-118 |
| Volume (vol) | vol.114 |
| Number (no) | no.359(EID), no.360(SDM) |
| Page | pp.51-54 |
| #Pages | 4 |
| Date of Issue | 2014-12-05 (EID, SDM) |
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