Paper Abstract and Keywords |
Presentation |
2015-06-19 14:55
Effect of the insertion of N2O added buffer layer on the characteristics of ZnO films grow on glass substrates by catalytic reaction assisted chemical vapor deposition Shingo Kanouchi, Yuki Ishizuka, Yuki Ohashi (Nagaoka Univ. technol.), Koichiro Oishi, Hironori Katagiri (Nagaoka Nat. Coll. Technol.), Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. technol.) EMD2015-15 CPM2015-25 OME2015-28 Link to ES Tech. Rep. Archives: EMD2015-15 CPM2015-25 OME2015-28 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Aiming at the growth of high-quality ZnO films on glass substrates by a new CVD method using a catalytic reaction, effect of N2O-doped seed layer inserted between the ZnO film and glass substrate was investigated. Dimethylzinc (DMZ) and high energy H2O generated by a catalytic reaction were used as zinc and oxygen sources, respectively. Electron mobility of the ZnO films increased by an appropriate N2O-doped seed layer and the maximum mobility of 30.1 cm2/Vs was obtained by the seed layer for 15 s. Optical transmittance in the visible wavelength region of 400-700 nm was also improved by the insertion of the N2O-doped seed layer. Parameter E0 indicating the fluctuation of the sub-bandgap energy of the films was evaluated from optical absorption coefficients at subband gap energy. The E0 decreased by the insertion of the N2O-doped seed layer and was correlated with the electron mobility of the ZnO films. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ZnO / catalytic reaction / high-energy H2O / electron mobility / band edge fluctuation / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 104, CPM2015-25, pp. 23-27, June 2015. |
Paper # |
CPM2015-25 |
Date of Issue |
2015-06-12 (EMD, CPM, OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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EMD2015-15 CPM2015-25 OME2015-28 Link to ES Tech. Rep. Archives: EMD2015-15 CPM2015-25 OME2015-28 |
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