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Paper Abstract and Keywords
Presentation 2015-06-19 14:55
Effect of the insertion of N2O added buffer layer on the characteristics of ZnO films grow on glass substrates by catalytic reaction assisted chemical vapor deposition
Shingo Kanouchi, Yuki Ishizuka, Yuki Ohashi (Nagaoka Univ. technol.), Koichiro Oishi, Hironori Katagiri (Nagaoka Nat. Coll. Technol.), Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. technol.) EMD2015-15 CPM2015-25 OME2015-28
Abstract (in Japanese) (See Japanese page) 
(in English) Aiming at the growth of high-quality ZnO films on glass substrates by a new CVD method using a catalytic reaction, effect of N2O-doped seed layer inserted between the ZnO film and glass substrate was investigated. Dimethylzinc (DMZ) and high energy H2O generated by a catalytic reaction were used as zinc and oxygen sources, respectively. Electron mobility of the ZnO films increased by an appropriate N2O-doped seed layer and the maximum mobility of 30.1 cm2/Vs was obtained by the seed layer for 15 s. Optical transmittance in the visible wavelength region of 400-700 nm was also improved by the insertion of the N2O-doped seed layer. Parameter E0 indicating the fluctuation of the sub-bandgap energy of the films was evaluated from optical absorption coefficients at subband gap energy. The E0 decreased by the insertion of the N2O-doped seed layer and was correlated with the electron mobility of the ZnO films.
Keyword (in Japanese) (See Japanese page) 
(in English) ZnO / catalytic reaction / high-energy H2O / electron mobility / band edge fluctuation / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 104, CPM2015-25, pp. 23-27, June 2015.
Paper # CPM2015-25 
Date of Issue 2015-06-12 (EMD, CPM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EMD2015-15 CPM2015-25 OME2015-28

Conference Information
Committee EMD CPM OME  
Conference Date 2015-06-19 - 2015-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2015-06-EMD-CPM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of the insertion of N2O added buffer layer on the characteristics of ZnO films grow on glass substrates by catalytic reaction assisted chemical vapor deposition 
Sub Title (in English)  
Keyword(1) ZnO  
Keyword(2) catalytic reaction  
Keyword(3) high-energy H2O  
Keyword(4) electron mobility  
Keyword(5) band edge fluctuation  
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1st Author's Name Shingo Kanouchi  
1st Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. technol.)
2nd Author's Name Yuki Ishizuka  
2nd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. technol.)
3rd Author's Name Yuki Ohashi  
3rd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. technol.)
4th Author's Name Koichiro Oishi  
4th Author's Affiliation Nagaoka National College of Technology (Nagaoka Nat. Coll. Technol.)
5th Author's Name Hironori Katagiri  
5th Author's Affiliation Nagaoka National College of Technology (Nagaoka Nat. Coll. Technol.)
6th Author's Name Yasuhiro Tamayama  
6th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. technol.)
7th Author's Name Kanji Yasui  
7th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. technol.)
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Speaker Author-1 
Date Time 2015-06-19 14:55:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # EMD2015-15, CPM2015-25, OME2015-28 
Volume (vol) vol.115 
Number (no) no.103(EMD), no.104(CPM), no.105(OME) 
Page pp.23-27 
#Pages 5 
Date of Issue 2015-06-12 (EMD, CPM, OME) 

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