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Paper Abstract and Keywords
Presentation 2015-08-11 10:00
Formation of high density Ge-nanodots on SOI substrates -- Aiming at enhancement of emission from Ge-nanodots using photonic crystal --
Makoto Morioka, Koudai Watanabe, Masataka Tomita, Hideyuki Toyota, Ariyuki Kato, Yasuhiro Tamayama, Toshio Kanbayashi, Kanji Yasui (Nagaona Univ. Technol.) CPM2015-41
Abstract (in Japanese) (See Japanese page) 
(in English) Aiming at the enhancement of emission intensity from Ge nanodots using photonic crystal, the Ge nanodots were formed on silicon-on-insulator (SOI) substrates by gas source MBE. Surface structure of the substrates after the dot formation was observed using a scanning tunneling microscope (STM). Emission from the nanodots was observed at approximately 0.8 eV by low-temperature photoluminescence (PL) measurement. A structure of the photonic crystal for the enhancement of emission from the Ge nanodots was calculated using finite-difference time-domain (FDTD) simulation.
Keyword (in Japanese) (See Japanese page) 
(in English) Ge-nonodot / SOI substrate / photonic crystal / STM / PL / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 179, CPM2015-41, pp. 51-55, Aug. 2015.
Paper # CPM2015-41 
Date of Issue 2015-08-03 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2015-08-10 - 2015-08-11 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2015-08-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Formation of high density Ge-nanodots on SOI substrates 
Sub Title (in English) Aiming at enhancement of emission from Ge-nanodots using photonic crystal 
Keyword(1) Ge-nonodot  
Keyword(2) SOI substrate  
Keyword(3) photonic crystal  
Keyword(4) STM  
Keyword(5) PL  
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1st Author's Name Makoto Morioka  
1st Author's Affiliation Nagaoka University of Technology (Nagaona Univ. Technol.)
2nd Author's Name Koudai Watanabe  
2nd Author's Affiliation Nagaoka University of Technology (Nagaona Univ. Technol.)
3rd Author's Name Masataka Tomita  
3rd Author's Affiliation Nagaoka University of Technology (Nagaona Univ. Technol.)
4th Author's Name Hideyuki Toyota  
4th Author's Affiliation Nagaoka University of Technology (Nagaona Univ. Technol.)
5th Author's Name Ariyuki Kato  
5th Author's Affiliation Nagaoka University of Technology (Nagaona Univ. Technol.)
6th Author's Name Yasuhiro Tamayama  
6th Author's Affiliation Nagaoka University of Technology (Nagaona Univ. Technol.)
7th Author's Name Toshio Kanbayashi  
7th Author's Affiliation Nagaoka University of Technology (Nagaona Univ. Technol.)
8th Author's Name Kanji Yasui  
8th Author's Affiliation Nagaoka University of Technology (Nagaona Univ. Technol.)
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Speaker Author-6 
Date Time 2015-08-11 10:00:00 
Presentation Time 20 minutes 
Registration for CPM 
Paper # CPM2015-41 
Volume (vol) vol.115 
Number (no) no.179 
Page pp.51-55 
#Pages 5 
Date of Issue 2015-08-03 (CPM) 

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