Paper Abstract and Keywords |
Presentation |
2015-08-11 10:00
Formation of high density Ge-nanodots on SOI substrates
-- Aiming at enhancement of emission from Ge-nanodots using photonic crystal -- Makoto Morioka, Koudai Watanabe, Masataka Tomita, Hideyuki Toyota, Ariyuki Kato, Yasuhiro Tamayama, Toshio Kanbayashi, Kanji Yasui (Nagaona Univ. Technol.) CPM2015-41 Link to ES Tech. Rep. Archives: CPM2015-41 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Aiming at the enhancement of emission intensity from Ge nanodots using photonic crystal, the Ge nanodots were formed on silicon-on-insulator (SOI) substrates by gas source MBE. Surface structure of the substrates after the dot formation was observed using a scanning tunneling microscope (STM). Emission from the nanodots was observed at approximately 0.8 eV by low-temperature photoluminescence (PL) measurement. A structure of the photonic crystal for the enhancement of emission from the Ge nanodots was calculated using finite-difference time-domain (FDTD) simulation. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Ge-nonodot / SOI substrate / photonic crystal / STM / PL / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 179, CPM2015-41, pp. 51-55, Aug. 2015. |
Paper # |
CPM2015-41 |
Date of Issue |
2015-08-03 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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CPM2015-41 Link to ES Tech. Rep. Archives: CPM2015-41 |