Paper Abstract and Keywords |
Presentation |
2016-01-20 11:20
[Invited Lecture]
State-of-the-art technology of gallium oxide power devices Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura) ED2015-114 Link to ES Tech. Rep. Archives: ED2015-114 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Gallium oxide (Ga{$_{2}$}O{$_{3}$}) is one of oxide semiconductors and has excellent material properties for power device applications. Another important advantage of Ga{$_{2}$}O{$_{3}$} is that large-area and high-quality wafers can be produced with simple and low-cost methods. From these features, Ga{$_{2}$}O{$_{3}$} has been attracting much attention as a new wide bandgap semiconductor following SiC and GaN. In this report, we introduce recent main progress of field-plated lateral Ga{$_{2}$}O{$_{3}$} metal-oxide-semiconductor field-effect transistors and vertical Ga{$_{2}$}O{$_{3}$} Schottky barrier diodes with drift layers grown by halide vapor phase epitaxy. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
gallium oxide / field plate / metal-oxide-semiconductor field-effect transistor (MOSFET) / halide vapor phase epitaxy / Schottky barrier diode / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 402, ED2015-114, pp. 13-18, Jan. 2016. |
Paper # |
ED2015-114 |
Date of Issue |
2016-01-13 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2015-114 Link to ES Tech. Rep. Archives: ED2015-114 |
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