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Paper Abstract and Keywords
Presentation 2016-01-20 11:20
[Invited Lecture] State-of-the-art technology of gallium oxide power devices
Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura) ED2015-114
Abstract (in Japanese) (See Japanese page) 
(in English) Gallium oxide (Ga{$_{2}$}O{$_{3}$}) is one of oxide semiconductors and has excellent material properties for power device applications. Another important advantage of Ga{$_{2}$}O{$_{3}$} is that large-area and high-quality wafers can be produced with simple and low-cost methods. From these features, Ga{$_{2}$}O{$_{3}$} has been attracting much attention as a new wide bandgap semiconductor following SiC and GaN. In this report, we introduce recent main progress of field-plated lateral Ga{$_{2}$}O{$_{3}$} metal-oxide-semiconductor field-effect transistors and vertical Ga{$_{2}$}O{$_{3}$} Schottky barrier diodes with drift layers grown by halide vapor phase epitaxy.
Keyword (in Japanese) (See Japanese page) 
(in English) gallium oxide / field plate / metal-oxide-semiconductor field-effect transistor (MOSFET) / halide vapor phase epitaxy / Schottky barrier diode / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 402, ED2015-114, pp. 13-18, Jan. 2016.
Paper # ED2015-114 
Date of Issue 2016-01-13 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2015-114

Conference Information
Committee ED  
Conference Date 2016-01-20 - 2016-01-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Power Devices and High-frequency Devices, Microwave, etc. 
Paper Information
Registration To ED 
Conference Code 2016-01-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) State-of-the-art technology of gallium oxide power devices 
Sub Title (in English)  
Keyword(1) gallium oxide  
Keyword(2) field plate  
Keyword(3) metal-oxide-semiconductor field-effect transistor (MOSFET)  
Keyword(4) halide vapor phase epitaxy  
Keyword(5) Schottky barrier diode  
Keyword(6)  
Keyword(7)  
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1st Author's Name Masataka Higashiwaki  
1st Author's Affiliation National Institute of Information and Communications Technology (NICT)
2nd Author's Name Man Hoi Wong  
2nd Author's Affiliation National Institute of Information and Communications Technology (NICT)
3rd Author's Name Keita Konishi  
3rd Author's Affiliation National Institute of Information and Communications Technology (NICT)
4th Author's Name Kohei Sasaki  
4th Author's Affiliation Tamura Corporation/National Institute of Information and Communications Technology (Tamura/NICT)
5th Author's Name Ken Goto  
5th Author's Affiliation Tamura Corporation/Tokyo University of Agriculture and Technology (Tamura/TAT)
6th Author's Name Kazushiro Nomura  
6th Author's Affiliation Tokyo University of Agriculture and Technology (TAT)
7th Author's Name Quang Tu Thieu  
7th Author's Affiliation Tokyo University of Agriculture and Technology (TAT)
8th Author's Name Rie Togashi  
8th Author's Affiliation Tokyo University of Agriculture and Technology (TAT)
9th Author's Name Hisashi Murakami  
9th Author's Affiliation Tokyo University of Agriculture and Technology (TAT)
10th Author's Name Yoshinao Kumagai  
10th Author's Affiliation Tokyo University of Agriculture and Technology (TAT)
11th Author's Name Bo Monemar  
11th Author's Affiliation Tokyo University of Agriculture and Technology (TAT)
12th Author's Name Akinori Koukitu  
12th Author's Affiliation Tokyo University of Agriculture and Technology (TAT)
13th Author's Name Akito Kuramata  
13th Author's Affiliation Tamura Corporation (Tamura)
14th Author's Name Takekazu Masui  
14th Author's Affiliation Tamura Corporation (Tamura)
15th Author's Name Shigenobu Yamakoshi  
15th Author's Affiliation Tamura Corporation (Tamura)
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Speaker Author-1 
Date Time 2016-01-20 11:20:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2015-114 
Volume (vol) vol.115 
Number (no) no.402 
Page pp.13-18 
#Pages
Date of Issue 2016-01-13 (ED) 


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