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Paper Abstract and Keywords
Presentation 2016-01-20 13:30
[Invited Lecture] The unique features of GaN power devices and the technologies to utilize their innate advantages
Ken Nakahara, Kentaro Chikamatsu, Atsushi Yamaguchi, Naotaka Kuroda (ROHM) ED2015-115
Abstract (in Japanese) (See Japanese page) 
(in English) The GaN power device have a very low value of RonQg as a figure of merit for power devices, where Ron denotes on-state resistance , and Qg gate charge. Therefore the most significant feature of GaN power devices is a high-frequency switching capability. In order to maximize this capability, the parasitic capacitances of GaN power devices should be as low as possible, and an embedded source field-plate structure is introduced. The structure enables the devices to switch in an order of ns. On the other hand, high-frequency switching deteriorates EMC, while it an be a key technology to miniaturize the power supply. Simulations have been developed to design power circuits without violating the EMC standard.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / source field-plate / high-frequency swtiching / EMC / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 402, ED2015-115, pp. 19-24, Jan. 2016.
Paper # ED2015-115 
Date of Issue 2016-01-13 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2015-115

Conference Information
Committee ED  
Conference Date 2016-01-20 - 2016-01-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Power Devices and High-frequency Devices, Microwave, etc. 
Paper Information
Registration To ED 
Conference Code 2016-01-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) The unique features of GaN power devices and the technologies to utilize their innate advantages 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) source field-plate  
Keyword(3) high-frequency swtiching  
Keyword(4) EMC  
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1st Author's Name Ken Nakahara  
1st Author's Affiliation ROHM CO., LTD. (ROHM)
2nd Author's Name Kentaro Chikamatsu  
2nd Author's Affiliation ROHM CO., LTD. (ROHM)
3rd Author's Name Atsushi Yamaguchi  
3rd Author's Affiliation ROHM CO., LTD. (ROHM)
4th Author's Name Naotaka Kuroda  
4th Author's Affiliation ROHM CO., LTD. (ROHM)
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Speaker Author-1 
Date Time 2016-01-20 13:30:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2015-115 
Volume (vol) vol.115 
Number (no) no.402 
Page pp.19-24 
#Pages 6 
Date of Issue 2016-01-13 (ED) 

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