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| Presentation | 2016-01-20 15:05 [Invited Lecture] Improvement in fmax of InP-based HEMTs for THz ICs Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.)  ED2015-118 Link to ES Tech. Rep. Archives: ED2015-118 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | High performance THz receivers should be required to realize high-speed wireless radio communications systems for increased data transmission. We developed THz ICs that have a power gain of 23 dB at 300 GHz band by utilizing high-speed InP-based HEMTs. The HEMT improved both cutoff frequency (fT) and maximum frequency of oscillation (fmax) by adopting a cavity structure around the gate region to decrease parasitic capacitances even though they are fully passivated with dielectric films after multilayer interconnections. Mostly, the fmax, i.e. power gain, is important for operating multi-stage amplifiers. We achieved an fmax of 660 GHz after modifying epitaxial layer and device structures. Further improvement in fmax was expected by employing modified device structure. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InP HEMT / THz / parasitic capacitance / cavity / cutoff frequency / fmax / gain / drain conductance | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 402, ED2015-118, pp. 37-41, Jan. 2016. | |
| Paper # | ED2015-118 | |
| Date of Issue | 2016-01-13 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2015-118 Link to ES Tech. Rep. Archives: ED2015-118 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2016-01-20 - 2016-01-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Power Devices and High-frequency Devices, Microwave, etc. |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2016-01-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement in fmax of InP-based HEMTs for THz ICs |
| Sub Title (in English) | |
| Keyword(1) | InP HEMT |
| Keyword(2) | THz |
| Keyword(3) | parasitic capacitance |
| Keyword(4) | cavity |
| Keyword(5) | cutoff frequency |
| Keyword(6) | fmax |
| Keyword(7) | gain |
| Keyword(8) | drain conductance |
| 1st Author's Name | Tsuyoshi Takahashi |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
| 2nd Author's Name | Yoichi Kawano |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
| 3rd Author's Name | Kozo Makiyama |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
| 4th Author's Name | Shoichi Shiba |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
| 5th Author's Name | Yasuhiro Nakasha |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
| 6th Author's Name | Naoki Hara |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
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| Speaker | Author-1 |
| Date Time | 2016-01-20 15:05:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2015-118 |
| Volume (vol) | vol.115 |
| Number (no) | no.402 |
| Page | pp.37-41 |
| #Pages | 5 |
| Date of Issue | 2016-01-13 (ED) |
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