Paper Abstract and Keywords |
Presentation |
2016-07-23 15:55
Heteroepitaxial Growth of InSb thin films on a Ge(111) substrate Takaaki Mitsueda, Masayuki Mori, Koichi Maezawa (Univ. Toyama) ED2016-31 Link to ES Tech. Rep. Archives: ED2016-31 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Recently, the improvement of the performance by the reduction in device size of the semiconductor device with Si is reaching the limit. We paid attention to Ge and InSb which are candidate materials for ultra-fast and low power device applications. If it were possible to grow high quality InSb films on Ge substrate, high performance CMOS by using these materials will be expected to realize on the identical substrate. In this study, we performed the MBE growth of InSb films on Ge(111) substrate using two-step growth procedure, and found that it can be grown InSb films with high crystal quality and smooth surface by optimizing growth conditions of low temperature buffer layer. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Ge / InSb / MBE / thin films / epitaxial growth / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 158, ED2016-31, pp. 21-24, July 2016. |
Paper # |
ED2016-31 |
Date of Issue |
2016-07-16 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2016-31 Link to ES Tech. Rep. Archives: ED2016-31 |
Conference Information |
Committee |
ED |
Conference Date |
2016-07-23 - 2016-07-24 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tokyo Metropolitan Univ. Minami-Osawa Campus, International House |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Semiconductor Processes and Devices |
Paper Information |
Registration To |
ED |
Conference Code |
2016-07-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Heteroepitaxial Growth of InSb thin films on a Ge(111) substrate |
Sub Title (in English) |
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Keyword(1) |
Ge |
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InSb |
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MBE |
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thin films |
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epitaxial growth |
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1st Author's Name |
Takaaki Mitsueda |
1st Author's Affiliation |
University of Toyama (Univ. Toyama) |
2nd Author's Name |
Masayuki Mori |
2nd Author's Affiliation |
University of Toyama (Univ. Toyama) |
3rd Author's Name |
Koichi Maezawa |
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University of Toyama (Univ. Toyama) |
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Speaker |
Author-1 |
Date Time |
2016-07-23 15:55:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2016-31 |
Volume (vol) |
vol.116 |
Number (no) |
no.158 |
Page |
pp.21-24 |
#Pages |
4 |
Date of Issue |
2016-07-16 (ED) |
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