IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2016-07-23 15:55
Heteroepitaxial Growth of InSb thin films on a Ge(111) substrate
Takaaki Mitsueda, Masayuki Mori, Koichi Maezawa (Univ. Toyama) ED2016-31 Link to ES Tech. Rep. Archives: ED2016-31
Abstract (in Japanese) (See Japanese page) 
(in English) Recently, the improvement of the performance by the reduction in device size of the semiconductor device with Si is reaching the limit. We paid attention to Ge and InSb which are candidate materials for ultra-fast and low power device applications. If it were possible to grow high quality InSb films on Ge substrate, high performance CMOS by using these materials will be expected to realize on the identical substrate. In this study, we performed the MBE growth of InSb films on Ge(111) substrate using two-step growth procedure, and found that it can be grown InSb films with high crystal quality and smooth surface by optimizing growth conditions of low temperature buffer layer.
Keyword (in Japanese) (See Japanese page) 
(in English) Ge / InSb / MBE / thin films / epitaxial growth / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 158, ED2016-31, pp. 21-24, July 2016.
Paper # ED2016-31 
Date of Issue 2016-07-16 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-31 Link to ES Tech. Rep. Archives: ED2016-31

Conference Information
Committee ED  
Conference Date 2016-07-23 - 2016-07-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Metropolitan Univ. Minami-Osawa Campus, International House 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor Processes and Devices 
Paper Information
Registration To ED 
Conference Code 2016-07-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Heteroepitaxial Growth of InSb thin films on a Ge(111) substrate 
Sub Title (in English)  
Keyword(1) Ge  
Keyword(2) InSb  
Keyword(3) MBE  
Keyword(4) thin films  
Keyword(5) epitaxial growth  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Takaaki Mitsueda  
1st Author's Affiliation University of Toyama (Univ. Toyama)
2nd Author's Name Masayuki Mori  
2nd Author's Affiliation University of Toyama (Univ. Toyama)
3rd Author's Name Koichi Maezawa  
3rd Author's Affiliation University of Toyama (Univ. Toyama)
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2016-07-23 15:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2016-31 
Volume (vol) vol.116 
Number (no) no.158 
Page pp.21-24 
#Pages
Date of Issue 2016-07-16 (ED) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan