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Paper Abstract and Keywords
Presentation 2016-10-27 11:15
Effect of Si surface flatness on electrical characteristics of Hf-based MONOS structure
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2016-76
Abstract (in Japanese) (See Japanese page) 
(in English) MONOS type nonvolatile memory is a promising candidate to replace floating gate type nonvolatile memory. In this study, ONO structure was deposited on atomically flat Si(100) surface to investigate the effect of Si surface flattening process on electrical characteristics of Hf-based MONOS structure. P-Si(100) substrates were annealed at 1000℃/60 min in Ar/4%H2 ambient for surface flattening. Then HfO2/HfN/HfO2 gate stack structures were in-situ deposited by ECR plasma sputtering and Al top electrode was deposited by thermal evaporation. It was revealed that memory window was increased from 1.0 V to 2.5 V by Si surface flattening.
Keyword (in Japanese) (See Japanese page) 
(in English) Si / atomically flattening process / Ar/H2 / Hf / MONOS type nonvolatile memory / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 270, SDM2016-76, pp. 39-44, Oct. 2016.
Paper # SDM2016-76 
Date of Issue 2016-10-19 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2016-76

Conference Information
Committee SDM  
Conference Date 2016-10-26 - 2016-10-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2016-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of Si surface flatness on electrical characteristics of Hf-based MONOS structure 
Sub Title (in English)  
Keyword(1) Si  
Keyword(2) atomically flattening process  
Keyword(3) Ar/H2  
Keyword(4) Hf  
Keyword(5) MONOS type nonvolatile memory  
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1st Author's Name Sohya Kudoh  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
2nd Author's Name Shun-ichiro Ohmi  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
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Speaker Author-1 
Date Time 2016-10-27 11:15:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2016-76 
Volume (vol) vol.116 
Number (no) no.270 
Page pp.39-44 
#Pages 6 
Date of Issue 2016-10-19 (SDM) 

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