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Paper Abstract and Keywords
Presentation 2018-06-25 13:30
[Invited Lecture] Inversion channel diamond MOSFET -- Formation of diamond MOS interface by wet annealing --
Tsubasa Matsumoto (Kanazawa Univ.), Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi (AIST), Takao Inokuma (Kanazawa Univ.), Satoshi Yamasaki (AIST), Norio Tokuda (Kanazawa Univ.) SDM2018-20
Abstract (in Japanese) (See Japanese page) 
(in English) We fabricated inversion channel diamond MOSFET with normally off characteristics. The diamond MOSFET with the inversion channel had not been reported until we reported the MOSFET, because diamond do not have a native oxide such as SiO2 in the Si MOSFET. The success was obtained by a high quality diamond MOS interface using a light phosphorus doping technique and a wet annealing technique for OH termination. In this report, we will discuss diamond as a material of MOSFET, the effects of the wet annealing technique in diamond MOS interface, and current status and issues of the diamond MOSFET.
Keyword (in Japanese) (See Japanese page) 
(in English) diamond / MOSFET / interface state / inversion / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 110, SDM2018-20, pp. 19-22, June 2018.
Paper # SDM2018-20 
Date of Issue 2018-06-18 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2018-20

Conference Information
Committee SDM  
Conference Date 2018-06-25 - 2018-06-25 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Univ. VBL3F 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2018-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Inversion channel diamond MOSFET 
Sub Title (in English) Formation of diamond MOS interface by wet annealing 
Keyword(1) diamond  
Keyword(2) MOSFET  
Keyword(3) interface state  
Keyword(4) inversion  
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1st Author's Name Tsubasa Matsumoto  
1st Author's Affiliation Kanazawa University (Kanazawa Univ.)
2nd Author's Name Hiromitsu Kato  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Toshiharu Makino  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Masahiko Ogura  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Daisuke Takeuchi  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Takao Inokuma  
6th Author's Affiliation Kanazawa University (Kanazawa Univ.)
7th Author's Name Satoshi Yamasaki  
7th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
8th Author's Name Norio Tokuda  
8th Author's Affiliation Kanazawa University (Kanazawa Univ.)
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Speaker Author-1 
Date Time 2018-06-25 13:30:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2018-20 
Volume (vol) vol.118 
Number (no) no.110 
Page pp.19-22 
#Pages 4 
Date of Issue 2018-06-18 (SDM) 

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