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| Presentation | 2018-06-25 16:15 Concern of Ferroelectric HfO2 Films Brought by Large Coercive Field Shinji Migita, Hiroyuki Ota (AIST), Akira Toriumi (Univ. Tokyo)  SDM2018-25 Link to ES Tech. Rep. Archives: SDM2018-25 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Ferroelectric HfO2-based thin films are attractive memory materials for application in LSI. These ferroelectrics have large coercive fields, 10 times larger than those of conventional ferroelectric materials. The large coercive field is advantageous for the attainment of a large memory window in ultrathin films. In another sense, however, the applied electric field for memory operation becomes close to the breakdown electric field of the film. Therefore it is important to secure robust memory properties during the cyclic voltage application. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | HfO2 / Hf-Zr-O / ferroelectric / metastable phase / endurance / coercive field / dielectric breakdown / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 110, SDM2018-25, pp. 43-46, June 2018. | |
| Paper # | SDM2018-25 | |
| Date of Issue | 2018-06-18 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2018-25 Link to ES Tech. Rep. Archives: SDM2018-25 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2018-06-25 - 2018-06-25 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. VBL3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2018-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Concern of Ferroelectric HfO2 Films Brought by Large Coercive Field |
| Sub Title (in English) | |
| Keyword(1) | HfO2 |
| Keyword(2) | Hf-Zr-O |
| Keyword(3) | ferroelectric |
| Keyword(4) | metastable phase |
| Keyword(5) | endurance |
| Keyword(6) | coercive field |
| Keyword(7) | dielectric breakdown |
| Keyword(8) | |
| 1st Author's Name | Shinji Migita |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 2nd Author's Name | Hiroyuki Ota |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 3rd Author's Name | Akira Toriumi |
| 3rd Author's Affiliation | The University of Tokyo (Univ. Tokyo) |
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| Speaker | Author-1 |
| Date Time | 2018-06-25 16:15:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2018-25 |
| Volume (vol) | vol.118 |
| Number (no) | no.110 |
| Page | pp.43-46 |
| #Pages | 4 |
| Date of Issue | 2018-06-18 (SDM) |
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