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Paper Abstract and Keywords
Presentation 2018-08-09 14:30
Effects of nitrogen doping on the properties of Si-doped DLC films
Kazuki Nakamura, Haruka Oohashi (Hirosaki Univ.), Tai Yokoyama, Kei-ichiro Tajima, Norihumi Endo, Maki Suemitsu (Tohoku Univ.), Yoshiharu Enta, Yasuyuki Kobayashi, Yushi Suzuki, Hideki Nakazawa (Hirosaki Univ.) CPM2018-8
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated the effects of nitrogen (N) doping on the chemical bonding states and the electrical, optical, and mechanical properties of Si-doped DLC (Si-DLC) films, which were prepared by plasma-enhanced chemical vapor deposition (PECVD) using H_2 as a dilution gas. Si/N codoped DLC (Si-N-DLC) films had higher optical gaps than N-doped DLC (N-DLC) films. We found that the optical bandgap of the Si-N-DLC films showed an increasing trend with increasing N content, while that of the N-DLC films showed an opposite trend. The I-V characteristics of the Si-N-DLC/p-Si heterojunctions were not rectifying. It was found that after annealing the Si-N-DLC films in a vacuum, the heterojunctions provided good rectifying characteristics.
Keyword (in Japanese) (See Japanese page) 
(in English) Diamond-like carbon / Plasma-enhanced chemical vapor deposition / Silicon / Nitrogen / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 179, CPM2018-8, pp. 1-6, Aug. 2018.
Paper # CPM2018-8 
Date of Issue 2018-08-02 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2018-08-09 - 2018-08-10 
Place (in Japanese) (See Japanese page) 
Place (in English) Hirosaki Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Component Parts and Materials, etc. 
Paper Information
Registration To CPM 
Conference Code 2018-08-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of nitrogen doping on the properties of Si-doped DLC films 
Sub Title (in English)  
Keyword(1) Diamond-like carbon  
Keyword(2) Plasma-enhanced chemical vapor deposition  
Keyword(3) Silicon  
Keyword(4) Nitrogen  
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Keyword(6)  
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Keyword(8)  
1st Author's Name Kazuki Nakamura  
1st Author's Affiliation Hirosaki University (Hirosaki Univ.)
2nd Author's Name Haruka Oohashi  
2nd Author's Affiliation Hirosaki University (Hirosaki Univ.)
3rd Author's Name Tai Yokoyama  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Kei-ichiro Tajima  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Norihumi Endo  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Maki Suemitsu  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
7th Author's Name Yoshiharu Enta  
7th Author's Affiliation Hirosaki University (Hirosaki Univ.)
8th Author's Name Yasuyuki Kobayashi  
8th Author's Affiliation Hirosaki University (Hirosaki Univ.)
9th Author's Name Yushi Suzuki  
9th Author's Affiliation Hirosaki University (Hirosaki Univ.)
10th Author's Name Hideki Nakazawa  
10th Author's Affiliation Hirosaki University (Hirosaki Univ.)
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Speaker Author-10 
Date Time 2018-08-09 14:30:00 
Presentation Time 20 minutes 
Registration for CPM 
Paper # CPM2018-8 
Volume (vol) vol.118 
Number (no) no.179 
Page pp.1-6 
#Pages 6 
Date of Issue 2018-08-02 (CPM) 

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