Paper Abstract and Keywords |
Presentation |
2018-08-09 14:30
Effects of nitrogen doping on the properties of Si-doped DLC films Kazuki Nakamura, Haruka Oohashi (Hirosaki Univ.), Tai Yokoyama, Kei-ichiro Tajima, Norihumi Endo, Maki Suemitsu (Tohoku Univ.), Yoshiharu Enta, Yasuyuki Kobayashi, Yushi Suzuki, Hideki Nakazawa (Hirosaki Univ.) CPM2018-8 Link to ES Tech. Rep. Archives: CPM2018-8 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have investigated the effects of nitrogen (N) doping on the chemical bonding states and the electrical, optical, and mechanical properties of Si-doped DLC (Si-DLC) films, which were prepared by plasma-enhanced chemical vapor deposition (PECVD) using H_2 as a dilution gas. Si/N codoped DLC (Si-N-DLC) films had higher optical gaps than N-doped DLC (N-DLC) films. We found that the optical bandgap of the Si-N-DLC films showed an increasing trend with increasing N content, while that of the N-DLC films showed an opposite trend. The I-V characteristics of the Si-N-DLC/p-Si heterojunctions were not rectifying. It was found that after annealing the Si-N-DLC films in a vacuum, the heterojunctions provided good rectifying characteristics. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Diamond-like carbon / Plasma-enhanced chemical vapor deposition / Silicon / Nitrogen / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 179, CPM2018-8, pp. 1-6, Aug. 2018. |
Paper # |
CPM2018-8 |
Date of Issue |
2018-08-02 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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