Paper Abstract and Keywords |
Presentation |
2020-10-29 16:40
Preparation of low-temperature-deposited ZrO2 film applicable to RRAM Masaru Sato, Yuki Kawai, Takayuki Mukai, Mayumi B. Takeyama (Kitami Inst. of tech.) CPM2020-21 Link to ES Tech. Rep. Archives: CPM2020-21 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In order to form insulating films applicable to resistive random access memory, we have prepared low-temperature-deposition of ZrO2 film. From XRD results, diffraction lines corresponding to monoclinic ZrO2 (m-ZrO2) and tetragonal ZrO2 (t-ZrO2) phases were seen. XRD results showed that the obtained ZrO2 film consists of mainly stable m-ZrO2 phase. Furthermore, we can demonstrate that the Cu/ZrO2/Pt structure has bipolar switching property with low current values. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Resistive random access memory / ZrO2 film / Bipolar switching property / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 120, no. 217, CPM2020-21, pp. 38-40, Oct. 2020. |
Paper # |
CPM2020-21 |
Date of Issue |
2020-10-22 (CPM) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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CPM2020-21 Link to ES Tech. Rep. Archives: CPM2020-21 |
Conference Information |
Committee |
CPM |
Conference Date |
2020-10-29 - 2020-10-29 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Online |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
CPM |
Conference Code |
2020-10-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Preparation of low-temperature-deposited ZrO2 film applicable to RRAM |
Sub Title (in English) |
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Keyword(1) |
Resistive random access memory |
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ZrO2 film |
Keyword(3) |
Bipolar switching property |
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1st Author's Name |
Masaru Sato |
1st Author's Affiliation |
Kitami Institute of Technology (Kitami Inst. of tech.) |
2nd Author's Name |
Yuki Kawai |
2nd Author's Affiliation |
Kitami Institute of Technology (Kitami Inst. of tech.) |
3rd Author's Name |
Takayuki Mukai |
3rd Author's Affiliation |
Kitami Institute of Technology (Kitami Inst. of tech.) |
4th Author's Name |
Mayumi B. Takeyama |
4th Author's Affiliation |
Kitami Institute of Technology (Kitami Inst. of tech.) |
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Speaker |
Author-1 |
Date Time |
2020-10-29 16:40:00 |
Presentation Time |
20 minutes |
Registration for |
CPM |
Paper # |
CPM2020-21 |
Volume (vol) |
vol.120 |
Number (no) |
no.217 |
Page |
pp.38-40 |
#Pages |
3 |
Date of Issue |
2020-10-22 (CPM) |